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MCB30P1200LB-TUB is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET 2N-CH 1200V 9SMPD. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for MCB30P1200LB-TUB
- Description：MOSFET 2N-CH 1200V 9SMPD
- Series：MCB30P1200LB
- Mfr：IXYS
- Package：Tube
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：9-PowerSMD
- Supplier Device Package：9-SMPD-B
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for MCB30P1200LB-TUB
FET, MOSFET Arrays Overview
The MCB30P1200LB-TUB is a silicon carbide (SiC) N-channel MOSFET module manufactured by IXYS. It features a 1200V drain-source breakdown voltage and a continuous drain current of 38A. The device utilizes the 9-SMPD-B surface-mount package, designed for high-power applications requiring efficient thermal management and compact form factors.
FET, MOSFET Arrays Feature Summary
- Utilizes silicon carbide technology for superior performance
- Designed for high-frequency switching operations
- Features low on-resistance characteristics
FET, MOSFET Arrays Applications
- High-efficiency power conversion systems
- Industrial motor drives
- Uninterruptible power supplies
FET, MOSFET Arrays Procurement Notes
Verify component authenticity through authorized IXYS distributors or certified partners. Confirm RoHS compliance status prior to integration. Ensure storage conditions adhere to manufacturer guidelines to maintain reliability. Cross-reference datasheet specifications with application requirements before finalizing procurement decisions.
FET, MOSFET Arrays Selection Notes
Select this module for applications demanding high voltage handling and efficient thermal dissipation. Evaluate thermal resistance parameters against system cooling capabilities. Consider the surface-mount package constraints during PCB layout design. Assess switching frequency requirements to ensure optimal performance within the specified operational limits.
FET, MOSFET Arrays Part Context
This component belongs to the IXYS SiC MOSFET array series, specifically engineered for robust power electronics. It represents an advancement in wide-bandgap semiconductor technology, offering improved efficiency compared to traditional silicon-based alternatives in similar voltage and current ratings.
FET, MOSFET Arrays Replacement Considerations
Direct substitutes include other IXYS SiC modules with matching 1200V ratings and SMPD-B packaging. Verify pin compatibility and thermal characteristics when considering alternative manufacturers' offerings.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
