FET, MOSFET Arrays MCCD2005-TP product image

MCCD2005-TP

  • Description:MOSFET 2N-CH 20V 8A 6DFN
  • Series:-

SKU:035b80aa9792 Category: Brand:

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MCCD2005-TP is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is MOSFET 2N-CH 20V 8A 6DFN. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MCCD2005-TP

  • Description:MOSFET 2N-CH 20V 8A 6DFN
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Common Drain
  • FET Feature:-
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:8A
  • Rds On (Max) @ Id, Vgs:13mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:17.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:1800pF @ 10V
  • Power - Max:-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-WFDFN Exposed Pad
  • Supplier Device Package:DFN2030-6
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for MCCD2005-TP

MCCD2005-TP

FET, MOSFET Arrays Overview

The MCCD2005-TP is a dual N-channel power MOSFET in a DFN2030-6 package. It features a drain-source voltage of 20 V and continuous drain current of 8 A. The device offers an ultra-low on-resistance of 13 mΩ at VGS=10V and ID=8A, with a total gate charge of 17.9 nC. Thermal resistance junction-to-ambient is 125 °C/W, supporting operation from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

  • Dual configuration integrating two independent N-channel MOSFETs within a single compact footprint.
  • Advanced trench process technology enabling ultra-low on-resistance and reduced gate charge for efficient switching.
  • Epoxy material meets UL 94 V-0 flammability rating for enhanced safety compliance.

FET, MOSFET Arrays Applications

  • Synchronous rectification circuits
  • Low voltage DC-DC converters
  • Power management modules

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix when purchasing. The standard part number includes the -TP designation for tape and reel packaging. Confirm availability of the halogen-free variant by checking for the additional -HF suffix if required by project specifications. Ensure sourcing through authorized distributors to guarantee component authenticity and traceability.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring low voltage handling and high current density in minimal space. The DFN2030-6 package provides thermal efficiency suitable for dense layouts. Evaluate the 13 mΩ on-resistance against load requirements to ensure acceptable conduction losses. Consider the 20 V breakdown voltage limit when designing input stages.

FET, MOSFET Arrays Part Context

This component belongs to Micro Commercial Components' dual MOSFET portfolio, designed for cost-effective integration in consumer electronics and industrial control systems. The DFN2030-6 form factor supports surface-mount assembly processes, facilitating automated manufacturing while maintaining robust electrical performance standards.

FET, MOSFET Arrays Replacement Considerations

No public substitute part numbers are documented in the official datasheet.

FET, MOSFET Arrays FAQ

What is the maximum pulsed drain current?

The maximum pulsed drain current (IDM) is rated at 30 A.

How can I obtain a halogen-free version?

Add the suffix '-HF' to the part number, resulting in MCCD2005-TP-HF.

What is the marking code on the device?

The device marking is '2005'.

MCCD2005-TPMCCD2005-TP

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