MCGD30P02-TP

FET, MOSFET Arrays Overview

The MCGD30P02-TP is a dual P-channel MOSFET array manufactured by Micro Commercial Components (MCC). It utilizes Trench Power MV MOSFET technology and is housed in a DFN3333-D package. The device features a drain-source voltage rating of -20V to -30V, with a maximum gate-source voltage of ±10V. Continuous drain current ranges from -5A at 100°C to -19A at 25°C. On-resistance varies between 11mΩ and 30mΩ depending on the gate drive voltage and current conditions. Total power dissipation is rated at 1W, supported by thermal resistances of 42°C/W junction-to-ambient and 5.9°C/W junction-to-case.

FET, MOSFET Arrays Feature Summary

• Dual P-channel configuration integrates two independent MOSFETs within a single compact surface-mount package.
• Trench Power MV MOSFET technology provides high-density cell design for low on-resistance and efficient switching.
• Robust thermal management capabilities with excellent heat dissipation characteristics suitable for dense layouts.
• Halogen-free construction with UL 94 V-0 flammability rating and lead-free finish compliant with RoHS standards.

FET, MOSFET Arrays Applications

• DC/DC converter circuits requiring complementary or parallel P-channel switching
• Load switch applications in portable electronic devices
• Power management modules in space-constrained industrial systems

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized MCC distributors due to industry counterfeiting risks. Confirm datasheet revision matches procurement requirements. Ensure storage conditions adhere to moisture sensitivity level 3 guidelines. Validate that the ordering suffix indicates RoHS compliance. Check for any specific handling precautions related to the DFN3333-D package during assembly.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual P-channel isolation in minimal footprint. Evaluate thermal performance against system dissipation needs given the 1W power rating. Consider gate threshold voltage variations for logic compatibility. Assess dynamic characteristics like gate charge and capacitance for high-speed switching efficiency. Verify package compatibility with PCB layout constraints.

FET, MOSFET Arrays Part Context

This part belongs to MCC's DFN3333-D dual MOSFET series, designed for compact power applications. It complements other dual-channel arrays by offering specialized P-channel configurations. The series targets consumer and industrial markets demanding high-density board layouts. Manufacturing follows strict environmental standards including halogen-free processes.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes must match the dual P-channel topology and DFN3333-D package dimensions. Verify electrical parameters such as breakdown voltage, on-resistance, and thermal resistance align with original specifications. Cross-reference pinout configurations to ensure compatibility without circuit redesign.

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current for the MCGD30P02-TP?

The maximum continuous drain current is -19A at an ambient temperature of 25°C and reduces to -5A at 100°C.

Does the MCGD30P02-TP support avalanche energy ratings?

Yes, the device has a single pulsed avalanche energy rating of 31mJ.

What is the reverse recovery time of the internal body diode?

The reverse recovery time is typically 67ns under specified test conditions.