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MCH3377-TL-E is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is SMALL SIGNAL FIELD-EFFECT TRANSI. Review the specifications below when checking this part for your BOM.
The MCH3377-TL-E is a P-channel enhancement mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 20 V and a continuous drain current of 3 A. The device utilizes silicon technology and is housed in an SOT-323-3 surface-mount package with three pins. Key electrical characteristics include a maximum on-resistance of 83 mΩ, a power dissipation rating of 1 W, and a maximum gate threshold voltage of 1.4 V. The component supports a maximum operating temperature of +150 °C.
Verify the specific suffix against official documentation, as the provided reference data lists MCH3377-TL-H as End-of-Life. Confirm RoHS compliance status through manufacturer datasheets or material composition reports before procurement. Ensure the ordering part number matches the required package and tape-and-reel specifications to avoid substitution errors during assembly.
Select this component for designs requiring a single P-channel switch with a 20 V breakdown voltage. The 83 mΩ on-resistance at 3 A provides efficient conduction for low-power loads. Verify that the gate drive voltage aligns with the 1.4 V threshold specification. Consider thermal constraints given the 1 W power dissipation limit in the small SOT-323-3 footprint.
This device belongs to the MCH3377 series of P-channel MOSFETs from onsemi. It serves as a discrete power transistor alternative to integrated solutions in simple switching topologies. The component is designed for general electronic applications where space-saving surface-mount packaging is required alongside moderate current handling capabilities.
Public records indicate MCH3377-TL-H is discontinued. Verify direct pin-compatible substitutes with matching 20 V, 3 A, and P-channel specifications. Cross-reference datasheets for Rds(on) and gate charge parameters to ensure circuit performance remains within design limits.
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