MCH3914-7-TL-H

Overview

The MCH3914-7-TL-H is an N-channel JFET from onsemi, housed in a surface-mount MCPH3 package. It features a maximum drain-source voltage of 15 V and a continuous drain current range of 16 to 50 mA. The device has a power dissipation rating of 300 mW and a transconductance of 29 mS. Input capacitance is specified at 4.9 pF, with a gate-source cutoff voltage of -1.4 V. It operates up to +150 °C.

Feature Summary

• N-channel junction field-effect transistor configuration
• Surface-mount MCPH3 package for compact integration
• High operating temperature capability up to +150 °C

Applications

• RF signal processing circuits
• Low-noise amplifier stages
• Impedance matching networks

Procurement Notes

Verify the specific suffix (7 vs 8) against the datasheet binning requirements, as these indicate different current or transconductance ranges. Confirm the MCPH3 package dimensions match the PCB footprint. Ensure RoHS compliance documentation is available for the specific manufacturing lot. Check for obsolescence status before finalizing the design.

Selection Notes

Select this component when a small-form-factor N-JFET is required for RF applications. The 15V rating suits low-voltage systems. Compare the 29mS transconductance against circuit gain requirements. Consider the 4.9pF input capacitance for high-frequency performance. Verify thermal management needs given the 300mW dissipation limit in the small package.

Part Context

This part belongs to onsemi's MCPH series of small-signal transistors. These components are designed for high-frequency analog and RF applications where size and noise performance are critical. The series includes various NPN, PNP, and JFET options optimized for surface-mount assembly in consumer and industrial electronics.

Replacement Considerations

MCH3914-8-TL-H is a confirmed substitute within the same family, differing primarily in current/transconductance binning.