MCH4015-TL-H

MCH4015-TL-H

$0.56
  • Description:RF TRANS NPN 12V 10GHZ 4-MCPH
  • Series:-

SKU:f64c298dfee5 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 12V 10GHZ 4-MCPH
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Frequency - Transition:10GHz
  • Noise Figure (dB Typ @ f):1.2dB @ 1GHz
  • Gain:17dB
  • Power - Max:450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 50mA, 5V
  • Current - Collector (Ic) (Max):100mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-343F
  • Supplier Device Package:4-MCPH
  • Grade:-
  • Qualification:-

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MCH4015-TL-H

Overview

The MCH4015-TL-H is an NPN single RF transistor manufactured by onsemi, housed in a surface-mount MCPH4 package. It features a maximum collector-to-emitter voltage of 12 V and a continuous collector current rating of 100 mA. The device achieves a typical gain-bandwidth product (fT) of 10 GHz at VCE=5V. Key electrical characteristics include a forward transfer gain magnitude squared (|S21e|^2) of 17 dB at 1 GHz and a typical noise figure of 1.2 dB at 1 GHz. Maximum power dissipation is rated at 450 mW with a junction temperature limit of 150 °C.

Feature Summary

  • Designed for low-noise applications with a typical noise figure of 1.2 dB at 1 GHz
  • Provides high-frequency performance with a typical cutoff frequency of 10 GHz
  • Delivers high gain with a typical |S21e|^2 of 17 dB at 1 GHz

Applications

  • Low-noise amplifier circuits
  • RF signal processing stages
  • High-frequency communication systems

Procurement Notes

Verify the component authenticity by checking the manufacturer marking against official datasheet specifications. Confirm the package type matches the MCPH4 dimensions and pin configuration. Ensure the ordering suffix corresponds to the required tape-and-reel quantity of 3,000 pieces per reel as specified in the product documentation.

Selection Notes

Select this component when designing circuits requiring high-frequency operation up to 10 GHz with minimal signal degradation. Evaluate the thermal management requirements based on the 450 mW power dissipation limit. Consider the specific biasing conditions provided in the S-parameter tables to optimize gain and noise performance for the target application frequency.

Part Context

This part belongs to the MCH4015 series of RF transistors from onsemi. It utilizes a silicon process technology optimized for high-frequency applications. The MCPH4 package provides a compact footprint suitable for space-constrained surface-mount designs while maintaining reliable thermal and electrical connections.

Replacement Considerations

BFP640FESDH6327XTSA1 and MMBTH10-TP are documented as similar replacement options.

MCH4015-TL-HMCH4015-TL-H
$0.56
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