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The MCH4015-TL-H is an NPN single RF transistor manufactured by onsemi, housed in a surface-mount MCPH4 package. It features a maximum collector-to-emitter voltage of 12 V and a continuous collector current rating of 100 mA. The device achieves a typical gain-bandwidth product (fT) of 10 GHz at VCE=5V. Key electrical characteristics include a forward transfer gain magnitude squared (|S21e|^2) of 17 dB at 1 GHz and a typical noise figure of 1.2 dB at 1 GHz. Maximum power dissipation is rated at 450 mW with a junction temperature limit of 150 °C.
Verify the component authenticity by checking the manufacturer marking against official datasheet specifications. Confirm the package type matches the MCPH4 dimensions and pin configuration. Ensure the ordering suffix corresponds to the required tape-and-reel quantity of 3,000 pieces per reel as specified in the product documentation.
Select this component when designing circuits requiring high-frequency operation up to 10 GHz with minimal signal degradation. Evaluate the thermal management requirements based on the 450 mW power dissipation limit. Consider the specific biasing conditions provided in the S-parameter tables to optimize gain and noise performance for the target application frequency.
This part belongs to the MCH4015 series of RF transistors from onsemi. It utilizes a silicon process technology optimized for high-frequency applications. The MCPH4 package provides a compact footprint suitable for space-constrained surface-mount designs while maintaining reliable thermal and electrical connections.
BFP640FESDH6327XTSA1 and MMBTH10-TP are documented as similar replacement options.