MCH5908G-TL-E

Overview

The MCH5908G-TL-E is an N-channel JFET in a dual MCPH5 package. It contains two chips equivalent to the 2SK3557. Drain-to-source voltage is 15V. Zero-gate voltage drain current ranges from 16 to 32mA. Forward transfer admittance is 35mS at 1kHz. Gate-to-drain breakdown voltage is -15V. Input capacitance is 10.5pF at 1MHz. Noise figure is 1.0dB at 1kHz. Allowable power dissipation is 200mW per unit.

Feature Summary

• Dual configuration within a single MCPH5 package for improved mounting efficiency
• Equivalent to two discrete 2SK3557 J-FETs integrated into one component
• Low noise performance suitable for sensitive signal applications

Applications

• Low-noise amplifier circuits
• High-impedance input stages
• Precision analog signal processing

Procurement Notes

Verify the specific G ranking suffix ensures the required IDSS range of 16 to 32mA. Confirm the MCPH5 package type matches your PCB land pattern. Ensure the TL-E designation aligns with your reel quantity requirements of 3,000 pieces. Cross-reference absolute maximum ratings against your circuit stress conditions.

Selection Notes

Select this part when space constraints require dual JFET functionality in a compact footprint. The G ranking provides higher drain current compared to the H variant. Verify that the 15V breakdown voltage meets your circuit's maximum operating limits. Consider the low noise figure if signal integrity is critical.

Part Context

This device belongs to the MCH5908 series by onsemi. It utilizes the MCPH5 package, also known as SC-88A or SOT-353. The series includes variants distinguished by IDSS rankings. The G ranking specifically targets applications requiring higher zero-gate voltage drain currents.

Replacement Considerations

The datasheet explicitly states equivalence to the 2SK3557. Verify pinout compatibility before substitution. Check if alternative dual JFET packages meet your spatial requirements.