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The MCH6544-TL-E is a dual NPN bipolar junction transistor (BJT) manufactured by onsemi, housed in a SOT-363-6 surface-mount package. It operates with silicon technology and supports a maximum DC collector current of 500 mA. Key electrical ratings include a collector-emitter voltage (VCEO) of 50 V, a collector-base voltage (VCBO) of 60 V, and an emitter-base voltage (VEBO) of 5 V. The device features a low collector-emitter saturation voltage of 50 mV and a power dissipation capability of 550 mW. Its gain-bandwidth product (fT) is 500 MHz, with a DC current gain (hFE) ranging from 300 to 800. The component is rated for a maximum operating temperature of +150°C.
Verify the End-of-Life status before integration, as the manufacturer has indicated this component will be discontinued. Confirm RoHS compliance details through official documentation. Ensure the SOT-363-6 footprint matches the design layout. Check for available replacement parts if long-term supply stability is required for production.
Select this component when a dual NPN BJT is needed with moderate voltage ratings and high current capacity. The 500 mA rating suits applications exceeding standard small-signal limits. The 500 MHz fT allows use in higher-speed switching than low-frequency transistors. Verify that the 550 mW power dissipation fits the thermal design constraints of the target enclosure.
This part belongs to the MCH6544 series of dual bipolar transistors from onsemi. It shares the SOT-363-6 package form factor with other compact dual transistor variants but differs in specific electrical ratings such as voltage and current limits. The series targets space-constrained designs requiring multiple discrete transistor functions in a single package.
Publicly confirmed substitute part numbers are not available in the provided data. Consult onsemi technical support or authorized distributors for qualified replacements compatible with the SOT-363-6 package and similar electrical specifications.