MCH6604-TL-E

FET, MOSFET Arrays Overview

The MCH6604-TL-E is a dual N-channel power MOSFET from onsemi, housed in an MCPH6 surface-mount package. It features a drain-source voltage (V_DSS) of 50 V and a continuous drain current (I_D) of 0.25 A at 25°C. The device supports logic-level gate drive voltages as low as 1.5 V. Key electrical parameters include a maximum static drain-to-source on-state resistance (R_DS(on)) of 7.8 Ω at I_D=50 mA and V_GS=4 V, and a total gate charge (Q_g) of 1.57 nC at V_GS=10 V. The component operates within a channel temperature range up to 150°C and offers a maximum allowable power dissipation of 0.8 W.

FET, MOSFET Arrays Feature Summary

• Dual composite configuration integrating two N-channel MOSFETs into a single compact package for high-density mounting
• Ultrahigh-speed switching capability with low total gate charge
• Logic-level gate drive support enabling operation at 1.5 V

FET, MOSFET Arrays Applications

• High-density surface mount circuit designs requiring dual transistor integration
• Low-voltage signal switching applications
• Battery-powered portable devices utilizing logic-level control signals

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix TL-E against official documentation to confirm packaging details and marking codes. Confirm that the MCPH6 package dimensions align with the target PCB land pattern requirements. Ensure handling procedures account for the specified ESD immunity characteristics during assembly.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel MOSFET solution is required in a minimal footprint. Evaluate the R_DS(on) specifications at the intended operating gate voltage to ensure acceptable conduction losses. Verify that the 50 V breakdown voltage provides sufficient margin for the application's peak drain-source voltage conditions.

FET, MOSFET Arrays Part Context

This part belongs to the MCH6604 series of dual N-channel MOSFETs manufactured by onsemi. It utilizes the MCPH6 package, which corresponds to JEITA/JEDEC standards SC-88, SC-70-6, or SOT-363. The device is designed for general-purpose switching applications where space constraints necessitate a compact dual-transistor configuration.

FET, MOSFET Arrays Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Cross-reference pinouts, specifically Source/Gate/Drain arrangements, and verify that replacement components meet or exceed the 50 V V_DSS and 0.25 A I_D ratings.