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MCH6608-TL-E is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is NCH+NCH 2.5V DRIVE SERIES. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for MCH6608-TL-E
- Description：NCH+NCH 2.5V DRIVE SERIES
- Series：*
- Mfr：onsemi
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for MCH6608-TL-E
FET, MOSFET Arrays Overview
The MCH6608-TL-E is a dual N-channel MOSFET array manufactured by onsemi, housed in a SOT-363-6 surface-mount package. It features a 50 V drain-source breakdown voltage and supports a continuous drain current of 250 mA. The device exhibits a maximum on-resistance of 7.8 ohms at a gate-source voltage of 10 V, with a threshold voltage of 1.3 V. Gate charge is specified at 1.57 nC. It operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 800 mW.
FET, MOSFET Arrays Feature Summary
- Dual N-channel configuration for compact circuit integration
- Enhancement mode operation with low gate threshold voltage
- High thermal stability supporting extended operating temperatures
FET, MOSFET Arrays Applications
- Low-voltage signal switching applications
- Battery protection circuits
- General-purpose load switching
FET, MOSFET Arrays Procurement Notes
Verify the component status as the product is listed as End-of-Life (EOL) with planned obsolescence. Confirm availability through authorized distributors or secondary markets. Ensure the specific ordering suffix matches the required tape-and-reel packaging format. Validate RoHS compliance details against the latest manufacturer documentation before finalizing procurement plans.
FET, MOSFET Arrays Selection Notes
Select this component for designs requiring dual N-channel switching in minimal space. The 7.8 ohm on-resistance suits low-current applications up to 250 mA. Consider the 50 V rating for compatibility with standard logic levels. Evaluate thermal management requirements given the 800 mW dissipation limit in the small SOT-363-6 package.
FET, MOSFET Arrays Part Context
This part belongs to onsemi's discrete semiconductor portfolio, specifically within the MOSFET arrays category. It utilizes silicon technology and is designed for surface-mount assembly. The device is part of a series optimized for 2.5V drive compatibility, aligning with modern low-power digital logic interfaces.
FET, MOSFET Arrays Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Due to the End-of-Life status, alternative sourcing requires careful evaluation of pinout and electrical parameter compatibility.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
