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MCH6619-TL-E is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is PCH+PCH 4V DRIVE SERIES. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for MCH6619-TL-E
- Description：PCH+PCH 4V DRIVE SERIES
- Series：*
- Mfr：onsemi
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for MCH6619-TL-E
FET, MOSFET Arrays Overview
The MCH6619-TL-E is a dual N-channel MOSFET array manufactured by onsemi, designed for surface-mount applications. It features an N-channel configuration with a drain-source voltage of 50V and continuous drain currents of 250mA per channel. The device utilizes silicon technology and operates within a temperature range from -55°C to +150°C. Key electrical characteristics include a gate-source threshold voltage of 1.3V and a maximum power dissipation of 800mW. This component is part of the low-voltage drive series, optimized for efficient switching in compact electronic designs.
FET, MOSFET Arrays Feature Summary
- Dual N-channel MOSFET array configuration for space-efficient circuit design
- Low gate-source threshold voltage enabling compatibility with low-voltage logic drivers
- Enhanced mode operation suitable for high-efficiency switching applications
FET, MOSFET Arrays Applications
- Low-voltage signal switching circuits
- Battery protection and management systems
- Portable consumer electronics power control
FET, MOSFET Arrays Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for end-of-life notices, as availability may be limited. Ensure storage conditions meet moisture sensitivity level requirements prior to assembly. Cross-reference datasheet specifications against current project requirements to validate performance suitability.
FET, MOSFET Arrays Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage switching tasks. Consider the 50V rating and 250mA current capacity relative to load requirements. Evaluate thermal management needs given the 800mW power dissipation limit. Compare alternative packages if board space constraints differ from the SOT-363-6 form factor.
FET, MOSFET Arrays Part Context
This device belongs to onsemi's portfolio of small-signal discrete semiconductors. It complements other low-voltage MOSFET arrays and bipolar transistors used in portable and industrial applications. The product line emphasizes energy efficiency and miniaturization, supporting modern electronic designs that demand high performance in minimal footprints.
FET, MOSFET Arrays Replacement Considerations
Check for direct pin-compatible alternatives within the same family. Verify that substitute parts match the 50V Vds and 250mA Id specifications. Ensure equivalent threshold voltage characteristics for logic compatibility.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
