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MCH6631-TL-E-SY is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Sanyo. Its product description is MOSFET N/P-CH. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for MCH6631-TL-E-SY
- Description：MOSFET N/P-CH
- Series：*
- Mfr：Sanyo
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for MCH6631-TL-E-SY
FET, MOSFET Arrays Overview
The MCH6631-TL-E-SY is a dual MOSFET component manufactured by Sanyo, integrating N-channel and P-channel metal-oxide semiconductor field-effect transistors within a single package. The device features six terminals in a small outline plastic surface-mount configuration. Key electrical specifications include a drain-source voltage rating of 20 V for the N-channel element and -12 V for the P-channel element. Maximum continuous drain currents are specified at 1.6 A for the N-channel and -1.5 A for the P-channel. The unit supports operation up to a junction temperature of 150 °C and utilizes depletion mode technology.
FET, MOSFET Arrays Feature Summary
- Integrates complementary N-channel and P-channel MOSFETs with built-in diodes into a single compact package for high-density mounting.
- Optimized for low on-resistance characteristics to enhance switching efficiency.
- Capable of operation with a 2.5 V drive voltage.
FET, MOSFET Arrays Applications
- General-purpose switching devices
- High-density circuit board implementations
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix '-TL-E-SY' against official Sanyo documentation to confirm tape-and-reel packaging and RoHS compliance status. Ensure the source document explicitly links this full part number to the MCH6632 electrical parameters provided, as suffix variations may indicate different binning or packaging formats not detailed in general datasheets.
FET, MOSFET Arrays Selection Notes
Select this component when space-constrained designs require paired N-channel and P-channel switching elements. The integrated diode configuration simplifies circuit topology compared to discrete solutions. Confirm that the 2.5 V drive capability aligns with the system logic levels and that the 0.245 Ω maximum on-resistance meets the thermal and efficiency requirements of the application.
FET, MOSFET Arrays Part Context
This component belongs to the Sanyo MCH series of dual MOSFETs. It is functionally similar to the MCH6632, sharing identical pin counts and core semiconductor structures. The device represents a consolidation strategy where separate N-type and P-type enhancement-mode transistors are combined to reduce footprint and simplify assembly processes in consumer electronics.
FET, MOSFET Arrays Replacement Considerations
Publicly confirmed substitute part numbers for the MCH6631-TL-E-SY are not available in the provided reference material. Cross-referencing with the MCH6632 requires verification of exact suffix compatibility and manufacturer approval.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
