MCQ11NP04-TP

FET, MOSFET Arrays Overview

The MCQ11NP04-TP is a dual N-and P-channel power MOSFET in an SOP-8 package. It utilizes Trench MOSFET technology for enhanced performance. The N-channel variant offers a drain-source breakdown voltage of 40 V, continuous drain current of 11 A at 25°C, and on-resistance of 32 mΩ at VGS=10V. The P-channel variant provides -40 V breakdown, -11 A current, and 33 mΩ on-resistance at VGS=-10V. Total power dissipation is 2.1 W for the N-channel and 2.3 W for the P-channel. Operating junction temperature ranges from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual configuration integrating both N-channel and P-channel transistors within a single SOP-8 package.
• Trench MOSFET technology designed to achieve low on-resistance and efficient switching characteristics.
• Halogen-free "Green" device construction with epoxy meeting UL 94 V-0 flammability ratings.
• Moisture sensitivity level 3 compliance for robust handling during surface mount assembly.

FET, MOSFET Arrays Applications

• DC-DC converter circuits requiring complementary channel control.
• Motor driver interfaces utilizing dual polarity switching.
• Power management modules for portable electronic devices.

FET, MOSFET Arrays Procurement Notes

Verify component authenticity by purchasing exclusively from Micro Commercial Components Corp or their listed authorized distributors. Unauthorized sources lack traceability and quality guarantees. Confirm RoHS compliance via the "P" suffix designation. Ensure storage and handling procedures adhere to Moisture Sensitivity Level 3 standards to prevent package damage prior to soldering.

FET, MOSFET Arrays Selection Notes

Select this component when space-constrained designs require integrated dual-polarity switching capabilities. The SOP-8 footprint accommodates standard surface mount processes. Evaluate thermal resistance values (60°C/W for N-channel, 55°C/W for P-channel) against system heat dissipation requirements. Ensure gate drive voltages align with the specified ±20 V maximum rating for reliable operation.

FET, MOSFET Arrays Part Context

This part belongs to the MCQ11NP04 series manufactured by Micro Commercial Components. It represents a specialized dual-transistor solution combining distinct N-type and P-type silicon technologies into one compact housing. The series targets applications demanding high integration density without sacrificing individual channel electrical performance.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FET, MOSFET Arrays FAQ

What is the thermal resistance for the N-channel transistor?

The N-channel thermal resistance is 60°C/W junction to ambient, measured on a 1in² FR-4 board with 2oz copper in still air at 25°C.

Does the device support avalanche energy?

Yes, the datasheet specifies single pulsed avalanche energy ratings: 15 mJ for the P-channel and 45 mJ for the N-channel.

What is the maximum operating junction temperature?

The maximum operating junction temperature range extends up to +150°C.