FET, MOSFET Arrays MCQ7328-TP product image

MCQ7328-TP

$0.88
  • Description:MOSFET 2P-CH 30V 8A 8SOP
  • Series:-

SKU:83ffddab6872 Category: Brand:

  
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MCQ7328-TP is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is MOSFET 2P-CH 30V 8A 8SOP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MCQ7328-TP

  • Description:MOSFET 2P-CH 30V 8A 8SOP
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:8A
  • Rds On (Max) @ Id, Vgs:21mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:78nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:2675pF @ 25V
  • Power - Max:1.4W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOP
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for MCQ7328-TP

MCQ7328-TP

FET, MOSFET Arrays Overview

The MCQ7328-TP is a dual P-channel MOSFET array manufactured by Micro Commercial Components (MCC). It utilizes Trench Power LV MOSFET technology and is housed in an SOP-8 surface-mount package. The device features a drain-source voltage rating of -30V and a continuous drain current of -6.4A at 25°C, with a maximum pulsed drain current of -32A. At VGS=-10V and ID=-8A, the typical on-resistance is 21mΩ. Key electrical parameters include a gate threshold voltage range of -1.0V to -2.5V and a total power dissipation of 1.4W. The component operates within a junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

  • Dual P-channel configuration integrated into a single compact SOP-8 package for space-efficient circuit designs.
  • Trench Power LV MOSFET technology providing low on-resistance characteristics.
  • Halogen-free construction meeting UL 94 V-0 flammability ratings for epoxy materials.
  • Moisture Sensitivity Level 1 classification ensuring robust handling during assembly.

FET, MOSFET Arrays Applications

  • Power management circuits requiring dual P-channel switching capabilities
  • Low voltage load switch applications
  • Battery protection modules

FET, MOSFET Arrays Procurement Notes

Verify that the ordering suffix matches the required tape and reel quantity of 4000 pieces per reel. Confirm RoHS compliance status as indicated by the specific part designation. Ensure procurement channels are authorized distributors to guarantee genuine components and full traceability. Check datasheet revision dates against manufacturing lot codes for consistency.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel solution is required in an SOP-8 footprint. Evaluate thermal performance based on the 89°C/W junction-to-ambient resistance value under standard FR-4 board conditions. Consider the -30V breakdown voltage limit for system design margins. Verify gate drive voltage compatibility with the specified threshold ranges for optimal switching performance.

FET, MOSFET Arrays Part Context

This component belongs to MCC's lineup of trench power MOSFETs designed for low-voltage applications. The SOP-8 package provides a standardized form factor for surface-mount assembly. The dual configuration allows for independent control of two channels within a single semiconductor die structure, simplifying layout and reducing component count in power supply architectures.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FET, MOSFET Arrays FAQ

What is the maximum pulsed drain current rating?

The maximum pulsed drain current is rated at -32A, limited by the maximum junction temperature.

Does the device support avalanche energy operation?

Yes, the datasheet specifies a single pulsed avalanche energy rating of 49mJ under defined test conditions.

What is the reverse recovery time of the body diode?

The reverse recovery time is typically 19ns when tested with IF=-4A and dIF/dt=-100A/μs.

MCQ7328-TPMCQ7328-TP
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