MCQD09N06Y-TP

FET, MOSFET Arrays Overview

The MCQD09N06Y-TP is a dual N-channel Power MOSFET manufactured by Micro Commercial Components (MCC). It utilizes split gate trench technology and is housed in an SOP-8 surface-mount package. The device features a drain-source breakdown voltage of 60 V and a continuous drain current rating of 9 A at 25°C, reducing to 5.7 A at 100°C. The maximum on-resistance is 20 mΩ at VGS=10V and ID=9A. Total power dissipation is rated at 1.7 W with a thermal resistance of 75°C/W junction-to-ambient. Operating and storage temperatures range from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Split Gate Trench MOSFET Technology
• High Density Cell Design For Low RDS(ON)
• Moisture Sensitivity Level 3
• Halogen Free Green Device

FET, MOSFET Arrays Applications

• Power switching circuits
• DC-DC converters
• Motor control applications

FET, MOSFET Arrays Procurement Notes

Verify the part number suffix against official documentation to confirm RoHS compliance status. Ensure procurement channels are authorized distributors to guarantee genuine parts and full traceability. Confirm packaging specifications match project requirements, as this component is supplied in tape and reel format. Review the manufacturer's general terms and conditions regarding liability and life support usage restrictions before integration.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual N-channel isolation within a compact SOP-8 footprint. Evaluate thermal management strategies carefully due to the 1.7 W power dissipation limit and 75°C/W thermal resistance. Verify that the 60 V drain-source voltage provides adequate margin for the specific circuit operating conditions. Consider the 20 mΩ on-resistance impact on conduction losses at the target load current levels.

FET, MOSFET Arrays Part Context

This component belongs to the MCQD series of dual N-channel MOSFETs from Micro Commercial Components. It shares the SOP-8 package form factor with other devices in the lineup but offers distinct electrical characteristics tailored for medium-power switching applications. The dual configuration allows for efficient implementation of half-bridge or synchronous rectifier topologies.

FET, MOSFET Arrays Replacement Considerations

Consult official MCC documentation for verified substitute part numbers. Cross-referencing requires matching package type, pinout configuration, and critical electrical parameters such as breakdown voltage and on-resistance.

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current at elevated temperatures?

The continuous drain current decreases to 5.7 A when the ambient temperature reaches 100°C.

Does the device include an internal body diode?

Yes, the datasheet specifies continuous body diode current and reverse recovery time characteristics.

What is the moisture sensitivity level of this component?

The component has a Moisture Sensitivity Level of 3.