MCT5211M

Transistor, Photovoltaic Output Optoisolators Overview

The MCT5211M is a single-channel transistor output optocoupler from onsemi, featuring an NPN phototransistor with a base terminal. It utilizes a high-efficiency AlGaAs infrared emitting diode coupled within a six-pin PDIP package for through-hole mounting. Key electrical parameters include a maximum collector-emitter voltage of 100 V and a peak forward current of 50 mA. The device offers a minimum current transfer ratio of 150% at 1.6 mA input current. It provides robust insulation with a rated isolation voltage of 4170 Vrms. The unit supports a wide operating temperature range from -40°C to +100°C and has a power dissipation rating of 225 mW.

Transistor, Photovoltaic Output Optoisolators Feature Summary

• Integrates an AlGaAs infrared LED with an NPN phototransistor for efficient signal transmission.
• Provides high-voltage isolation capability suitable for separating circuits with significant potential differences.
• Includes a dedicated base terminal on the phototransistor to enhance switching speed and linearity.

Transistor, Photovoltaic Output Optoisolators Applications

• Industrial control systems requiring galvanic isolation
• Signal isolation in microprocessor-based circuits
• Power supply feedback loops

Transistor, Photovoltaic Output Optoisolators Procurement Notes

Verify the specific ordering suffix to confirm the packaging type, as the MCT5211M series includes both bulk DIP variants and surface-mount reel options. Confirm RoHS compliance status directly with the manufacturer or authorized distributors prior to procurement. Ensure the selected variant matches the required thermal management and mechanical mounting constraints for the target application design.

Transistor, Photovoltaic Output Optoisolators Selection Notes

Select this component when a standard NPN phototransistor output with base access is required for moderate-speed digital isolation. The 100 V collector-emitter voltage rating allows for versatile interface capabilities across various logic levels. Consider the 150% minimum CTR for driving downstream loads efficiently. Evaluate the PDIP-6 package dimensions against available PCB real estate compared to surface-mount alternatives if space is constrained.

Transistor, Photovoltaic Output Optoisolators Part Context

This part belongs to the MCT52XXM series, which shares common internal architecture and electrical characteristics. The series differentiates primarily by minor parameter tolerances and packaging configurations. The MCT5211M specifically denotes the standard NPN output configuration within this family, widely used in general-purpose isolation applications where cost-effectiveness and reliability are prioritized over ultra-high-speed performance.

Transistor, Photovoltaic Output Optoisolators Replacement Considerations

Direct pin-compatible substitutes within the same series include MCT5211SR2M for surface-mount requirements. Verify that alternative components maintain the same 100 V collector-emitter voltage and 150% minimum current transfer ratio specifications to ensure circuit compatibility without redesign.

Transistor, Photovoltaic Output Optoisolators FAQ

What is the typical turn-on and turn-off time for the MCT5211M?

The typical turn-on time is 14 µs and the typical turn-off time is 2.5 µs.

Does the MCT5211M phototransistor have a base connection?

Yes, the device features an NPN phototransistor with a base terminal, allowing for external biasing or speed enhancement.