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Product Detailed Parameters
- Description：IGBT MOD 1200V 180A 760W Y3DCB
- Series：-
- Mfr：IXYS
- Package：Box
- IGBT Type：NPT
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 100A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Y3-DCB
- Supplier Device Package：Y3-DCB
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：180 A
- Power - Max：760 W
- Current - Collector Cutoff (Max)：7.5 mA
- Input Capacitance (Cies) @ Vce：6.6 nF @ 25 V
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Overview
The MDI150-12A4 is an insulated gate bipolar transistor module manufactured by IXYS. It utilizes NPT IGBT technology and features a single switch with a built-in ultra-fast free-wheeling diode in a MODULE-7 package. The device supports a collector-emitter breakdown voltage of 1200 V and a continuous collector current of 330 A. Typical saturation voltage is 2.2 V, with a maximum gate-emitter voltage of 20 V. The module offers a square reverse bias safe operating area (RBSOA), high short-circuit capability, and an isolation voltage of 4800 V.
Feature Summary
- NPT IGBT technology providing low saturation voltage and reduced switching losses
- Square RBSOA with no latch-up and high short-circuit capability
- Ultra-fast free-wheeling diodes integrated with positive temperature coefficient for easy paralleling
Applications
- AC and DC motor control systems
- AC servo and robot drives
- Industrial power supplies
- Welding inverters
Procurement Notes
Verify the specific revision suffix against the manufacturer's latest datasheet to ensure compatibility with required isolation voltages and thermal characteristics. Confirm that the MODULE-7 footprint matches the target PCB design. Check for any recent product change notices regarding material composition or manufacturing location updates.
Selection Notes
Select this component for applications requiring high current handling up to 330 A at 1200 V. Ensure the cooling solution can manage the thermal dissipation associated with the typical 2.2 V saturation voltage. Verify that the driving circuitry supports the voltage-controlled MOS input and operates within the specified 20 V gate-emitter limit.
Part Context
This module belongs to the MDI series of IGBT modules from IXYS, designed for medium to high-power industrial applications. The series is characterized by robust short-circuit withstand capabilities and efficient switching performance suitable for frequencies up to 30 kHz. It represents a standard solution for inverter and converter topologies in industrial automation.
Replacement Considerations
Potential substitutes include the MDI145-12A3 and MID75-12A3 from the same manufacturer family. Verify pinout compatibility and thermal resistance values before substitution. Cross-reference electrical ratings to ensure the alternative meets or exceeds the 1200 V and 330 A requirements.
