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The MDI200-12A4 is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by IXYS. It features a single IGBT with a built-in diode configuration housed in a MODULE-7 flange mount package. The device supports a maximum collector current of 200 A and a collector-emitter breakdown voltage of 1200 V. Key electrical parameters include a typical saturation voltage of 2.2 V at 330 A, a gate-emitter voltage limit of 20 V, and a maximum operating temperature of 150 °C. The component utilizes a rectangular, isolated case design with five terminals for secure mounting and electrical connection.
Verify the specific suffix 'A4' against the manufacturer's latest datasheet to confirm pinout compatibility and thermal interface specifications. Ensure that the sourcing channel provides original manufacturer documentation to validate authenticity and traceability before finalizing any acquisition.
Select this module when designing circuits requiring high current handling capabilities up to 200 A with a 1200 V blocking voltage. Consider the MODULE-7 package dimensions and flange mounting requirements for adequate heat sink integration. Evaluate the thermal resistance characteristics to ensure the system can maintain junction temperatures within the specified 150 °C limit under continuous load conditions.
This component belongs to the MID series of IGBT modules from IXYS, designed for medium to high-power industrial applications. The series typically offers optimized short-circuit ruggedness and square Reverse Bias Safe Operating Area (RBSOA). These modules are engineered to provide reliable performance in demanding environments where efficiency and thermal management are critical.
Publicly confirmed substitute part numbers for the MDI200-12A4 were not identified in available documentation. Verify electrical and mechanical compatibility carefully if considering alternative manufacturers or different series modules from IXYS.