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The MDI300-12A4 is an Insulated Gate Bipolar Transistor module manufactured by IXYS. It features a single configuration with a built-in diode and utilizes the MODULE-7 package. The device supports a maximum collector current of 330 A and a collector-emitter breakdown voltage of 1200 V. Typical saturation voltage is 2.2 V, with a maximum gate-emitter voltage of 20 V. It operates at junction temperatures up to 150 °C and includes isolated flange mounting.
Verify component authenticity through authorized IXYS distributors or certified suppliers. Confirm datasheet revisions match the production batch. Ensure storage conditions comply with moisture sensitivity levels. Validate packaging integrity against shipping damage. Request traceability documentation for critical industrial deployments.
Select this module for applications requiring high current handling in a compact footprint. Verify thermal interface material compatibility with the isolated flange. Ensure gate drive circuits accommodate the specified voltage limits. Evaluate cooling requirements based on the 150 °C maximum junction temperature rating.
This component belongs to the MID300 series of IGBT modules from IXYS. The series is designed for robust performance in medium-power conversion systems. Variants within the family share similar mechanical dimensions but differ in voltage and current ratings.
Direct substitutes include MII300-12A4 and MID300-12A4. These parts share identical pinouts and electrical characteristics. Verify specific lot markings and revision codes before implementation.