MDS1100

Overview

The MDS1100 is a high-power NPN common-base bipolar transistor designed for pulsed avionics applications at 1030 MHz. It features a maximum collector-emitter breakdown voltage of 65V and supports a peak collector current of 100A. The device delivers a minimum DC current gain (hFE) of 20 at 5A and 5V, with a transition frequency of 1.03GHz. It operates at a junction temperature up to 200°C and utilizes the 55TU-1 package.

Feature Summary

• High power capability optimized for pulsed systems
• Common base configuration for RF stability
• Designed specifically for 1030 MHz avionics frequencies

Applications

• Pulsed avionics radar systems
• MODE-S transponder amplifiers
• RF power amplification at 1030 MHz

Procurement Notes

Verify component authenticity through authorized channels due to obsolete status. Confirm package integrity and pin alignment against the 55TU-1 specification. Review datasheet revisions for any parameter updates. Ensure storage conditions maintain junction temperature limits during handling.

Selection Notes

Select this component for high-power pulsed applications requiring operation at 1030 MHz. Consider the common base topology for impedance matching requirements. Evaluate thermal management capabilities given the 200°C junction temperature rating. Verify compatibility with existing circuit designs for avionics use cases.

Part Context

Part of Microsemi's discrete semiconductor product line focusing on bipolar junction transistors. Designed for specialized RF applications in the aviation sector. Represents legacy technology for specific pulsed power amplification needs.

Replacement Considerations

No public confirmed substitute part numbers are available. Check for compatible alternatives within the same manufacturer family or equivalent specifications from other suppliers.