MDS500L

Overview

The MDS500L is a high-power NPN bipolar RF transistor manufactured by Microsemi Corporation. It operates within the L-band frequency range of 1.03 GHz to 1.09 GHz, with a transition frequency up to 1.09 GHz. The device supports a maximum collector current of 24 A and delivers up to 833 W of output power. Key electrical specifications include a collector-emitter breakdown voltage of 70 V and a minimum DC current gain (hFE) of 20 at 1 A and 5 V. It features a high junction temperature rating of 200°C and utilizes the hermetically sealed 55ST chassis package for base mounting.

Feature Summary

• High-power capability delivering up to 833W output in the L-band
• Robust thermal performance with a junction temperature rating of 200°C
• Hermetically sealed construction using the 55ST chassis package
• Designed for common-base configuration applications

Applications

• High-power RF amplification systems
• Military and aerospace communication transmitters
• Industrial radio frequency heating equipment

Procurement Notes

Verify component authenticity through authorized Microchip/Microsemi channels due to availability constraints. Confirm that the specific order matches the 55ST package variant and hermetic sealing requirements. Check for end-of-life status or obsolescence notices from the manufacturer before finalizing procurement plans. Ensure compatibility with existing chassis mounting infrastructure.

Selection Notes

Select this component for applications requiring high linearity and power density in the 1-1.1 GHz range. Consider the 55ST package dimensions and thermal management needs for base mounting. Evaluate the 70V breakdown voltage against circuit peak voltages. Assess the need for hermetic sealing based on environmental exposure levels.

Part Context

The MDS500L belongs to the family of high-power bipolar RF transistors produced by Microsemi. These devices are engineered for demanding environments where reliability and power handling are critical. The 55ST package is a standard form factor for chassis-mounted RF power transistors in this class, facilitating efficient heat dissipation and mechanical stability.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.