RF Diode MG1010-M11 product image

MG1010-M11

  • Description:RF DIODE PIN 8V 100MW
  • Series:-

SKU:0711e7555c48 Category: Brand:

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MG1010-M11 is listed in the RF Diode range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is RF DIODE PIN 8V 100MW. Review the specifications below when checking this part for your BOM.

RF Diode specifications for MG1010-M11

  • Description:RF DIODE PIN 8V 100MW
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tray
  • Diode Type:PIN - Single
  • Voltage - Peak Reverse (Max):8V
  • Current - Max:800 mA
  • Capacitance @ Vr, F:-
  • Resistance @ If, F:-
  • Power Dissipation (Max):100 mW
  • Operating Temperature:-
  • Package / Case:Stud
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for MG1010-M11

MG1010-M11

RF Diode Overview

The MG1010-M11 is a Gallium Arsenide (GaAs) Gunn diode from the Microsemi MG1001 series, designed for Ku-band continuous wave applications. It operates within a frequency range of 12.4 GHz to 18.0 GHz and delivers a minimum output power of 100 mW. The device utilizes an epi-down cathode heatsink configuration for thermal management. Typical operating parameters include a voltage of 8 V and an operating current ranging from 400 mA to 800 mA. It is housed in the M11 ceramic package outline.

RF Diode Feature Summary

  • Utilizes GaAs epitaxial layers grown via chemical vapor deposition to achieve low phase noise performance.
  • Features an epi-down cathode heatsink design for efficient thermal dissipation.
  • Constructed with a gold finish compliant with RoHS standards.

RF Diode Applications

  • Motion Detectors
  • Transmitters and Receivers
  • Automotive Collision Avoidance Radars

RF Diode Procurement Notes

Verify component authenticity through authorized Microchip Technology channels or certified distributors. Confirm that the specific part number matches the required Ku-band specifications and M11 package style. Ensure handling procedures adhere to electrostatic discharge precautions as the device is sensitive to ESD damage during installation.

RF Diode Selection Notes

Select this component when designing Ku-band systems requiring discrete frequency operation between 12.4 GHz and 18.0 GHz. Ensure the bias circuit can supply the typical 8 V operating voltage and accommodate the 400 mA to 800 mA current range. Verify that the M11 package outline fits the mechanical constraints of the intended microwave assembly.

RF Diode Part Context

This component belongs to the MG1001–MG1060 series of discrete frequency Gunn diodes manufactured by Microsemi, now part of Microchip Technology. The series covers a broad spectrum from C-band to W-band, utilizing various ceramic package styles such as M11, M16, 42, and 83B to suit different power and frequency requirements.

RF Diode Replacement Considerations

No official substitute part numbers are documented in the provided datasheet. When replacing this unit, ensure the new component matches the 12.4–18.0 GHz frequency range, 100 mW minimum power, and M11 package dimensions. Consult the manufacturer for alternative frequencies or package styles if exact matching is not feasible.

MG1010-M11MG1010-M11

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