MG12100S-BN2MM

$55.44

Description：IGBT MODULE 1200V 140A 450W S3
Series：-

SKU:f5570a2465e4 Category: IGBT Modules Brand: Littelfuse Inc.

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Product introduction

Product Detailed Parameters

Description：IGBT MODULE 1200V 140A 450W S3
Series：-
Mfr：Littelfuse Inc.
Package：Bulk
IGBT Type：Trench Field Stop
Configuration：Half Bridge
Vce(on) (Max) @ Vge, Ic：1.7V @ 15V, 100A (Typ)
Input：Standard
NTC Thermistor：No
Operating Temperature：-40°C ~ 125°C (TJ)
Mounting Type：Chassis Mount
Package / Case：S-3 Module
Supplier Device Package：S3
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：140 A
Power - Max：450 W
Current - Collector Cutoff (Max)：1 mA
Input Capacitance (Cies) @ Vce：7.1 nF @ 25 V

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MG12100S-BN2MM

Overview

The MG12100S-BN2MM is a Trench Field Stop Half Bridge IGBT module manufactured by Littelfuse Inc. It features a collector-emitter breakdown voltage of 1200V and a continuous collector current rating of 100A. The device is housed in an S3 chassis mount package with a maximum power dissipation of 450W. Key electrical characteristics include a gate-emitter threshold voltage ranging from 5.0V to 6.5V and a collector-emitter saturation voltage of 1.7V at 150A. This component is designed for high-power switching applications requiring robust performance.

Feature Summary

Utilizes Trench Field Stop technology for efficient switching
Configured as a half-bridge module for versatile circuit integration
Designed for chassis mounting to facilitate thermal management

Applications

Industrial motor drives
Power supply inverters
High-frequency switching circuits

Procurement Notes

Verify the specific suffix BN2MM against official Littelfuse documentation to confirm exact pinout and thermal interface specifications. Confirm availability status as some distributors list this part as obsolete or end-of-life. Ensure compatibility with existing cooling solutions given the 450W power dissipation rating. Cross-reference datasheet revisions to ensure compliance with current manufacturing standards before procurement.

Selection Notes

Select this module when a 1200V, 100A half-bridge configuration is required. Consider the S3 package dimensions for mechanical fit within the enclosure. Evaluate thermal resistance requirements against the 450W dissipation limit. Compare gate charge characteristics against drive capabilities to ensure proper switching speed. Verify that the Trench Field Stop architecture aligns with system efficiency targets.

Part Context

This IGBT module belongs to Littelfuse's S3 series of power modules. The series is characterized by compact packaging and high current density. The MG12100S-BN2MM specifically integrates two IGBTs and associated diodes in a single half-bridge unit. It represents a solution for medium to high-power electronic systems requiring reliable semiconductor switching.