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Product Detailed Parameters
- Description：IGBT MODULE 1200V 300A 1400W D3
- Series：-
- Mfr：Littelfuse Inc.
- Package：Bulk
- IGBT Type：-
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 200A (Typ)
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：D3
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：300 A
- Power - Max：1400 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：14.9 nF @ 25 V
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Overview
The MG12200D-BA1MM is a 1200 V, 300 A IGBT half-bridge power module manufactured by Littelfuse Inc. It features a D3 chassis mount package and delivers 1400 W of power handling capability. The device utilizes dual NPN transistor polarity with a collector-emitter saturation voltage of 1.8 V at 25°C. Designed for high ruggedness and short-circuit tolerance, it incorporates fast free-wheeling diodes and exhibits a positive temperature coefficient for stable parallel operation.
Feature Summary
- High ruggedness with significant short-circuit current capability
- Positive temperature coefficient ensures balanced current sharing in parallel configurations
- Integrated fast free-wheeling diodes reduce switching losses and improve system efficiency
Applications
- Industrial motor drives and variable frequency drives
- Uninterruptible power supply (UPS) systems
- High-power DC-AC inverters for renewable energy applications
Procurement Notes
Verify the specific manufacturer source, as this component is also listed under IXYS branding within Littelfuse's portfolio. Confirm the exact datasheet revision and electrical test conditions provided by the supplier to ensure compliance with the 1200 V and 300 A ratings. Request original packaging documentation to authenticate genuine Littelfuse or IXYS origin before finalizing procurement orders.
Selection Notes
Select this module for applications requiring robust overcurrent protection and high thermal stability. The positive temperature coefficient is critical for paralleling multiple units to increase total current capacity without complex active balancing circuits. Ensure the cooling solution supports the 1400 W dissipation rating and that the gate drive circuitry aligns with the specified saturation voltage characteristics.
Part Context
This part belongs to the MG series of power modules, which are engineered for demanding industrial environments. The 'G' designation indicates an IGBT configuration, while the 'D3' refers to the specific chassis mounting form factor. This series is designed to replace older discrete IGBT solutions with higher integration and reliability standards for modern power electronics.
Replacement Considerations
The MG12150D-BA1MM is a documented substitute within the same product family, offering similar architectural features but with different current ratings. Verify pin compatibility and thermal interface requirements when transitioning between these variants to maintain system integrity.
