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The MGD623S is a 600 V trench IGBT with an integrated fast recovery diode manufactured by Sanken Electric. It features a trench structure that reduces gate capacitance for high-speed switching and lower losses. Key electrical parameters include a collector-emitter voltage (VCE) of 600 V, a continuous collector current (IC) of 37 A at TC = 100 °C, and a typical saturation voltage (VCE(sat)) of 1.8 V. The integrated diode exhibits a typical forward voltage (VF) of 1.2 V. Switching performance includes a typical fall time (tf) of 120 ns at TJ = 25 °C and a reverse recovery time (trr) of 300 ns.
Verify the specific datasheet revision (e.g., Rev.1.1 dated Jul. 05, 2017) when sourcing components to ensure alignment with design requirements. Confirm compliance with environmental directives such as RoHS through official manufacturer documentation or authorized distributors before finalizing procurement decisions.
Select this component for applications requiring 600 V blocking capability and moderate current handling up to 37 A at elevated case temperatures. Consider the thermal resistance values (RθJC) and safe operating area curves when designing heat dissipation systems. Ensure gate drive voltages remain within the ±30 V limit to prevent device damage.
The MGD623S belongs to Sanken's line of power semiconductor devices designed for consumer electronics and home appliances. It is packaged in a TO3P-3L format, suitable for mounting on heatsinks. The device is intended for general purpose electronic equipment and requires specific verification for use in safety-critical or transportation applications.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult Sanken Electric sales representatives for potential alternatives or updated product lines if the MGD623S is no longer available.
The maximum collector-emitter voltage (VCE) rating is 600 V.
The Sanken original trench structure decreases gate capacitance, which achieves high speed switching and reduces switching loss.
The typical reverse recovery time (trr) is 300 ns under conditions of IF = 30 A and di/dt = 100 A/μs.