MGP15N40CLG

Overview

The MGP15N40CLG is a Logic Level Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, designed for high-voltage and high-current switching applications. It features monolithic circuitry integrating ESD and over-voltage clamped protection. The device offers a collector-emitter voltage of 440 VDC and supports a continuous collector current of 15 A at 25°C case temperature, with pulsed capability up to 50 A. Key electrical parameters include a maximum saturation voltage of 2.25 V at 15 A and 4.0 V gate drive, and a typical input capacitance of 1300 pF. Thermal resistance from junction to case is 1.0 °C/W. The component operates within a temperature range of -55°C to 175°C.

Feature Summary

• Integrates ESD and over-voltage clamped protection for robust operation in inductive coil drivers.
• Features a low threshold voltage enabling direct interface with logic or microprocessor devices.
• Includes temperature compensated gate-collector voltage clamp to limit stress applied to the load.
• Offers optional integrated gate resistor for simplified circuit design.

Applications

• Ignition systems
• Direct fuel injection circuits
• Coil-on-plug configurations
• IGBT-on-coil architectures
• Distributorless ignition system applications

Procurement Notes

Verify the specific ordering suffix to confirm package type and environmental compliance. The 'G' suffix indicates a lead-free TO-220AB package, while other variants may utilize D2PAK or standard TO-220AB without lead-free designation. Confirm pin assignments match the required mounting style, as TO-220AB and D2PAK packages have distinct pinout configurations. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values provided in the datasheet.

Selection Notes

Select this component for applications requiring high-voltage switching with integrated protection features. The logic-level gate drive simplifies control circuitry by allowing direct connection to microprocessors. Evaluate the thermal requirements against the 1.0 °C/W junction-to-case resistance, particularly for high-duty cycle operations. Consider the 50 A pulsed current capability for handling inductive load transients during ignition or fuel injection events.

Part Context

This IGBT belongs to onsemi's portfolio of power semiconductors focused on automotive and industrial switching applications. It is part of a series designed to replace traditional discrete solutions by integrating protection mechanisms directly into the silicon die. The device complements other power modules and discrete transistors offered by the manufacturer for energy conversion and control systems.

Replacement Considerations

The MGB15N40CL is listed as a preferred device variant with identical electrical characteristics but potentially different packaging or manufacturing lot specifications. Verify pin compatibility when substituting between TO-220AB and D2PAK packages due to differences in physical footprint and thermal dissipation paths.

FAQ

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCES) is rated at 440 VDC.

Does the device include internal protection circuits?

Yes, it integrates ESD protection and an over-voltage clamped protection circuit for the gate-collector junction.

What is the operating temperature range?

The device supports an operating and storage temperature range from -55°C to +175°C.