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The MGP19N35CL is a Logic Level Insulated Gate Bipolar Transistor (IGBT) from onsemi, featuring SMARTDISCRETES™ monolithic circuitry for internal clamping. It is designed as an N-Channel device with integrated gate-emitter ESD protection and gate-collector overvoltage protection. The component offers temperature-compensated gate-collector clamp limits to reduce stress on the load, low threshold voltage for logic interface compatibility, and low saturation voltage. It supports high pulsed current capability, making it suitable for driving power loads directly from microprocessors or logic circuits.
Verify the exact part number MGP19N35CL against official onsemi documentation, as public records primarily list the similar MGP20N35CL. Confirm availability status and specific package details through authorized distributors. Ensure the datasheet matches the intended electrical requirements before procurement.
Select this IGBT when a logic-level gate drive is required for inductive loads like ignition coils. The integrated clamping simplifies design by eliminating external snubber components. Compare with the MGP20N35CL if higher current ratings are needed, ensuring the thermal and electrical specifications meet the application's peak current demands.
This component belongs to the SMARTDISCRETES family of internally clamped IGBTs. It shares architectural similarities with the MGP20N35CL and MGP15N35CL, differing primarily in current handling capabilities. These devices are engineered to simplify driver designs by combining the IGBT switch with protective circuitry on a single die.
The MGP20N35CL is a closely related variant within the same SMARTDISCRETES series. Verify pinout compatibility and ensure the alternative part meets or exceeds the required pulsed current and voltage ratings for the specific application.