RF Diode MGS907B-E45R product image

MGS907B-E45R

$65.07
  • Description:RF DIODE SCHOTTKY 10V 75MW E45
  • Series:MGS9xx

SKU:c705097d3085 Category: Brand:

  
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MGS907B-E45R is listed in the RF Diode range at ChipApex. The manufacturer field lists MACOM Technology Solutions. Its product description is RF DIODE SCHOTTKY 10V 75MW E45. Review the specifications below when checking this part for your BOM.

RF Diode specifications for MGS907B-E45R

  • Description:RF DIODE SCHOTTKY 10V 75MW E45
  • Series:MGS9xx
  • Mfr:MACOM Technology Solutions
  • Package:Bulk
  • Diode Type:Schottky - 1 Bridge
  • Voltage - Peak Reverse (Max):10V
  • Current - Max:50 mA
  • Capacitance @ Vr, F:0.08pF @ 0V, 1MHz
  • Resistance @ If, F:-
  • Power Dissipation (Max):75 mW
  • Operating Temperature:-65°C ~ 150°C (TA)
  • Package / Case:E45
  • Supplier Device Package:E45
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for MGS907B-E45R

MGS907B-E45R

RF Diode Overview

The MGS907B-E45R is a Schottky diode manufactured by MACOM Technology Solutions, designed for high-frequency RF applications. It utilizes a GaAs package configuration and is identified with the E45R suffix, which typically denotes specific tape-and-reel packaging or lead-free compliance standards. As part of the MGS8xx/MGS9xx series, this component serves as a fundamental passive element in microwave circuits, providing rectification or switching capabilities within compact form factors suitable for integrated RF front-end modules.

RF Diode Feature Summary

  • Schottky barrier technology for fast switching performance
  • GaAs-based construction for RF compatibility
  • RoHS compliant and lead-free manufacturing

RF Diode Applications

  • RF signal detection and demodulation
  • Microwave mixing circuits
  • Protective clamping in RF paths

RF Diode Procurement Notes

Verify the E45R suffix against the manufacturer's current datasheet to confirm exact packaging specifications and environmental compliance status. Ensure that the GaAs package type matches the intended PCB footprint and thermal requirements. Cross-reference the MGS907B designation with official MACOM documentation to validate pinout configurations before integration into design schematics.

RF Diode Selection Notes

Select this component when a low-capacitance Schottky diode is required for high-frequency operation within a small GaAs package. Consider the MGS907B-E45R for designs prioritizing minimal forward voltage drop and rapid recovery times in RF environments. Evaluate thermal management needs based on the specific package constraints inherent to the E45R variant.

RF Diode Part Context

This device belongs to the MGS9xx series from MACOM, which focuses on millimeter-wave and microwave semiconductor solutions. The MGS907B-E45R represents a specific iteration within this family, tailored for applications requiring reliable Schottky diode performance in compact, high-density electronic assemblies typical of modern communication systems.

RF Diode Replacement Considerations

Consult MACOM's official substitution guide for direct equivalents. Generic Schottky diodes may not match the specific GaAs package characteristics or RF performance metrics of the MGS907B-E45R without thorough validation.

MGS907B-E45RMGS907B-E45R
$65.07
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