RF Diode MGS912 product image

MGS912

$24.91
  • Description:RF DIODE SCHOTTKY 20V 75MW B89
  • Series:MGS9xx

SKU:f69dc660c087 Category: Brand:

  
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MGS912 is listed in the RF Diode range at ChipApex. The manufacturer field lists MACOM Technology Solutions. Its product description is RF DIODE SCHOTTKY 20V 75MW B89. Review the specifications below when checking this part for your BOM.

RF Diode specifications for MGS912

  • Description:RF DIODE SCHOTTKY 20V 75MW B89
  • Series:MGS9xx
  • Mfr:MACOM Technology Solutions
  • Package:Bulk
  • Diode Type:Schottky - Quad
  • Voltage - Peak Reverse (Max):20V
  • Current - Max:50 mA
  • Capacitance @ Vr, F:0.03pF @ 0V, 1MHz
  • Resistance @ If, F:28Ohm @ 5mA, 1MHz
  • Power Dissipation (Max):75 mW
  • Operating Temperature:-65°C ~ 150°C (TA)
  • Package / Case:B89
  • Supplier Device Package:B89
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for MGS912

MGS912

RF Diode Overview

The MGS912 is a GaAs Schottky diode manufactured by MACOM Technology Solutions. It features four junctions and is designed for high-frequency applications. The device operates within a temperature range of -65°C to 150°C (TA). Key electrical specifications include a maximum peak reverse voltage of 20V and a maximum forward current of 50 mA. The component is classified as a PIN-Quad diode type and is currently listed as an active product in the MGS9xx series.

RF Diode Feature Summary

  • Constructed from Gallium Arsenide (GaAs) material for enhanced RF performance.
  • Integrates four distinct junctions within a single package structure.
  • Capable of operation across an extended industrial temperature range.

RF Diode Applications

  • RF signal detection and mixing circuits
  • High-frequency switching applications
  • Microwave receiver front-end components

RF Diode Procurement Notes

Verify the specific package configuration and datasheet revisions directly with MACOM or authorized distributors before procurement. Confirm that the bulk packaging format aligns with your assembly requirements. Ensure compliance with RoHS and other relevant regulatory standards applicable to your region. Cross-reference the manufacturer part number to avoid confusion with similar variants in the MGS series.

RF Diode Selection Notes

Select this component when a compact, multi-junction GaAs solution is required for frequencies where silicon diodes may exhibit excessive capacitance. The 20V reverse voltage rating suits moderate power levels. Consider the 50 mA current limit for biasing constraints. The wide operating temperature range supports deployment in harsh environments without derating concerns typical of lower-grade alternatives.

RF Diode Part Context

This device belongs to the MGS9xx series of GaAs Schottky diodes from MACOM. These components are engineered for robust performance in microwave and millimeter-wave systems. The series is known for consistent manufacturing quality and reliability in defense and telecommunications sectors. The MGS912 specifically addresses needs for quad-junction configurations in space-constrained designs.

RF Diode Replacement Considerations

No public substitute part numbers are confirmed in available documentation. Consult MACOM engineering for qualified alternatives if supply chain constraints arise. Do not assume pin-compatible replacements from other manufacturers without rigorous validation of electrical parameters and thermal characteristics.

RF Diode FAQ

What is the maximum operating temperature for the MGS912?

The MGS912 supports an ambient operating temperature range up to 150°C.

How many junctions does the MGS912 contain?

The MGS912 contains four internal junctions, configured as a PIN-Quad diode.

MGS912MGS912
$24.91
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