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The MGV125-08-P55 is a packaged GaAs hyperabrupt varactor diode from the MACOM MGV125-x Series, characterized by a constant gamma of 1.25. It features passivated mesa construction for low leakage and stability. Electrical specifications at TA = +25°C and VB = 22 V min. include a total capacitance range of 0.36 pF (min) to 0.50 pF (max), with a nominal value of 0.43 pF at VR = 4 V and 1 MHz. The device offers a minimum tuning ratio of 1.6 (VR = 2 to 12 V) and a typical Q factor of 4,000 at VR = 4 V and 50 MHz.
Verify the specific P55 package variant against the official datasheet to confirm pinout and mechanical dimensions. Ensure that screening requirements align with MIL-PRF-19500 or MIL-PRF-35834 if military-grade reliability is mandated. Confirm RoHS compliance status for the specific manufacturing lot prior to integration into final assemblies.
Select this component when a nominal capacitance near 0.43 pF is required for high-frequency tuning. The P55 package offers specific parasitic characteristics distinct from chip or other packaged variants. Evaluate the tuning ratio and Q factor requirements against the electrical table to ensure compatibility with the target circuit's voltage swing and frequency range.
This part belongs to the MGV125-x Series, which includes three constant gamma families: 0.75, 1.0, and 1.25. The MGV125 series covers various capacitance values and packaging options, including chips and surface-mount packages like E28, H20, and 0805-2. The P55 suffix denotes a specific packaged configuration within this broader family.
Direct substitutes within the same series include MGV125-08-E28, MGV125-08-H20, and MGV125-08-0805-2. These alternatives share identical electrical parameters but differ in package style and associated parasitic inductance/capacitance values. Verify mechanical fit and parasitic impact before substitution.
The MGV125-08-P55 has a constant gamma of 1.25, as indicated by the '125' designation in the model number.
Yes, the P55 package introduces parasitic elements. The datasheet lists specific package inductance (0.35 nH) and capacitance (0.13 pF) values for the P55 style, which must be accounted for in high-frequency designs.
The device supports a tuning voltage range of 0 to 22 V, with electrical specifications measured at a minimum breakdown voltage (VB) of 22 V.