MGV125-09

MGV125-09

  • Description:VARACTOR DIODE,GAAS,HYPERABRUPT,
  • Series:MGV

SKU:3a0336b7494b Category: Brand:

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Product Detailed Parameters

  • Description:VARACTOR DIODE,GAAS,HYPERABRUPT,
  • Series:MGV
  • Mfr:MACOM Technology Solutions
  • Package:Tray
  • Capacitance @ Vr, F:0.45pF @ 4V, 1MHz
  • Capacitance Ratio:10
  • Capacitance Ratio Condition:C2/C20
  • Voltage - Peak Reverse (Max):22 V
  • Diode Type:Single
  • Q @ Vr, F:4000 @ 4V, 50MHz
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:Die
  • Supplier Device Package:Chip

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MGV125-09

Overview

The MGV125-09 is a Gallium Arsenide (GaAs) hyperabrupt varactor diode from the MGV125-x series, featuring a constant gamma of 1.25 and passivated mesa construction for low leakage current. It operates with a tuning voltage range of 0 to 22 V and offers a nominal total capacitance of 0.40 pF at VR = 4 V and 1 MHz. The device provides a typical tuning ratio of 5.0 (VR = 2 to 12 V) and achieves a minimum Q factor of 4,000 at VR = 4 V and 50 MHz. Designed for applications up to 40 GHz, it is available in chip form (C01A) and packaged options.

Feature Summary

  • Passivated mesa construction ensures low leakage and excellent post-tuning drift stability.
  • Hyperabrupt junction design delivers high Q factors for superior tuning performance.
  • Constant gamma characteristic enables linear frequency tuning capabilities.

Applications

  • Tunable filters operating up to 40 GHz
  • Voltage-controlled oscillators (VCOs)
  • Phase-locked loops (PLLs)

Procurement Notes

Verify the specific package style required, as the base model number refers to the die or standard configuration. Confirm screening requirements against MIL-PRF-19500 or MIL-PRF-35834 if aerospace or defense specifications are mandatory. Ensure the ordering suffix matches the desired physical footprint, such as E28, H20, P55, or 0805-2, to guarantee mechanical compatibility with the target circuit board layout.

Selection Notes

Select this component when a constant gamma of 1.25 is required for specific tuning linearity characteristics. Compare the nominal capacitance of 0.40 pF against circuit requirements to ensure proper impedance matching at the target frequencies. Evaluate the Q factor of 4,000 at 50 MHz to confirm suitability for low-loss RF signal paths. Consider packaged variants if surface-mount assembly is preferred over bare die integration.

Part Context

This part belongs to the MGV125-x series of GaAs hyperabrupt varactor diodes manufactured by MACOM Technology Solutions. The series includes variants with different constant gammas, specifically the MGV075-x (gamma 0.75), MGV100-x (gamma 1.0), and MGV125-x (gamma 1.25). These devices share common fabrication technologies but differ in their capacitance-voltage characteristics to suit various tuning applications.

Replacement Considerations

Direct replacements within the same family include MGV125-08 and MGV125-20, which share the 1.25 constant gamma but offer different nominal capacitances. For alternative gamma values, consider the MGV100-x or MGV075-x series. Cross-brand substitution requires careful verification of the Cj-V curve and Q-factor specifications to maintain circuit performance.

MGV125-09MGV125-09

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