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The MGV125-20 is a Gallium Arsenide (GaAs) hyperabrupt varactor diode from the MGV125-x Series, characterized by a constant gamma of 1.25. It features passivated mesa construction for low leakage and stability. The device supports a tuning voltage range of 0 to 22 V with typical tuning ratios up to 10. Electrical specifications at TA = +25°C include a nominal total capacitance of 0.50 pF (range: 0.45–0.55 pF) measured at VR = 4 V and 1 MHz. At VR = 4 V and 50 MHz, it achieves a minimum Q factor of 4,000. Available in chip (C01A) or packaged formats such as E28, 28X, H20, P55, and 0805-2.
Verify the specific package style required for the application, as electrical parameters like parasitic capacitance and inductance vary between chip and packaged versions. Confirm if military screening per MIL-PRF-19500 or MIL-PRF-35834 is necessary, as this affects availability and lead times. Ensure the ordering suffix matches the desired form factor, such as E28, H20, or 0805-2.
Select the MGV125-20 when a nominal capacitance near 0.50 pF is required at 4 V bias. This model offers high Q factors suitable for low-loss applications. Consider alternative suffixes if packaged components are preferred over bare die. Verify that the 0–22 V tuning range aligns with the system's voltage supply capabilities.
The MGV125-20 belongs to the MGV125-x Series of GaAs hyperabrupt varactor diodes. This series includes variants with different capacitance values but shares the same 1.25 constant gamma characteristic. Other models in the family include MGV125-08 through MGV125-26, offering capacitances ranging from approximately 0.25 pF to 2.20 pF.
MGV125-20-E28, MGV125-20-H20, MGV125-20-P55, MGV125-20-0805-2