MGW12N120D

MGW12N120D

$2.36
  • Description:TRANS IGBT CHIP N-CH 1.2KV 20A
  • Series:*

SKU:f0e2022ff33b Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS IGBT CHIP N-CH 1.2KV 20A
  • Series:*
  • Mfr:onsemi
  • Package:Bulk
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Current - Collector (Ic) (Max):-
  • Current - Collector Pulsed (Icm):-
  • Vce(on) (Max) @ Vge, Ic:-
  • Power - Max:-
  • Switching Energy:-
  • Input Type:-
  • Gate Charge:-
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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MGW12N120D

Overview

The MGW12N120D is a high-voltage IGBT module manufactured by onsemi. It features a single switch configuration housed in a robust package designed for industrial power applications. The device integrates an N-channel Insulated Gate Bipolar Transistor with a fast recovery anti-parallel diode, providing efficient switching capabilities and low conduction losses. Key electrical characteristics include a collector-emitter voltage rating of 1200 V and a continuous collector current capacity suitable for medium-power inverter topologies. The module utilizes advanced chip technology to minimize switching energy while maintaining thermal stability under high load conditions.

Feature Summary

  • Integrated anti-parallel diode for inductive load commutation
  • Low saturation voltage for improved efficiency
  • Robust short-circuit withstand capability
  • Optimized thermal design for reliable operation

Applications

  • Induction heating systems
  • Motor drive inverters
  • Uninterruptible power supplies (UPS)
  • High-frequency welding equipment

Procurement Notes

Verify the specific suffix code against the manufacturer's latest datasheet to confirm pinout compatibility and thermal interface specifications. Ensure that the ordering information matches the exact voltage and current ratings required for the target application circuit. Cross-reference the manufacturing date code to confirm component availability and lifecycle status before finalizing procurement plans.

Selection Notes

Select this component based on its 1200 V blocking voltage and current handling capabilities relative to the system's peak load requirements. Evaluate the thermal resistance parameters to ensure adequate heat sinking solutions are implemented. Compare switching speed and gate charge specifications against alternative modules to optimize driver design and overall system efficiency for the intended power level.

Part Context

This module belongs to onsemi's high-power IGBT family, engineered for demanding industrial environments. It represents a generation of devices focused on balancing switching performance with ruggedness. The product line supports various inverter architectures commonly found in renewable energy and heavy machinery sectors, offering a standardized form factor for easy integration into existing power electronics designs.

Replacement Considerations

Consult official substitution guides for direct pin-compatible alternatives within the same voltage class. Verify that any replacement part maintains equivalent thermal resistance and mechanical dimensions. Ensure that the gate threshold voltage and total gate charge of the substitute match the original driver circuit capabilities to prevent malfunction.

MGW12N120DMGW12N120D
$2.36
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