MHT1008NT1

Overview

The MHT1008NT1 is an RF power LDMOS transistor manufactured by Freescale Semiconductor. It operates at a center frequency of 2.45 GHz with a continuous wave output power of 12.5 W. The device requires a drain voltage of 28 V and delivers a gain of 20.9 dB while drawing a maximum drain current of 110 mA. It utilizes the PLD-1.5W package for thermal management.

Feature Summary

• LDMOS construction for high reliability in RF applications
• Optimized for consumer and commercial cooking frequencies
• Designed for efficient power amplification

Applications

• Consumer cooking equipment
• Commercial cooking systems
• RF power amplification circuits

Procurement Notes

Verify the manufacturer designation, as this component is associated with both Freescale Semiconductor and NXP Semiconductors due to corporate acquisition history. Confirm the specific package type and electrical ratings against official datasheets before integration. Ensure compatibility with existing circuit designs regarding voltage and current specifications.

Selection Notes

Select this component for applications requiring robust RF power handling at 2.45 GHz. Consider the PLD-1.5W package for adequate heat dissipation. Evaluate the 28 V operating requirement and 110 mA current draw against power supply capabilities. Assess the 20.9 dB gain for system efficiency needs.

Part Context

This part belongs to the RF FETs and MOSFETs category, specifically within the RF FETs, MOSFETs sub-segment. It is classified as an RF Power Field-Effect Transistor. The device is silicon-based, N-channel, and designed for S-band operations. It represents a discrete semiconductor solution for high-frequency power applications.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.