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The MID300-12A4 is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by IXYS. It features a single configuration with a built-in diode and utilizes the MODULE-7 package. The device supports a maximum collector current of 330 A and a collector-emitter breakdown voltage of 1200 V. Typical saturation voltage is 2.2 V, with a maximum gate-emitter voltage of 20 V. The component operates at temperatures up to 150 °C and includes isolated flange mounting.
Verify the manufacturer datasheet for specific ordering suffixes and mechanical dimensions. Confirm RoHS compliance status and UL recognition details directly from official documentation before integration into designs.
Select this module for high-current applications requiring robust short-circuit withstand capability. Ensure thermal management solutions accommodate the 330 A continuous current rating and 150 °C junction temperature limit within the MODULE-7 housing constraints.
This component belongs to the MID series of IGBT modules designed for power conversion. It integrates an N-channel IGBT with a complementary diode in a single insulated package, facilitating compact implementation in high-power electronic systems.
Public confirmed substitute part numbers are not available in verified sources. Evaluate alternative IXYS modules with matching voltage, current, and pinout specifications if direct substitution is required.