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The IXYS MID400-12E4(T) is a half-bridge IGBT module utilizing NPT3 technology and HiPerFRED diodes. It features a 1200 V collector-emitter voltage rating with a typical saturation voltage of 2.2 V at 25°C. The continuous collector current is 420 A at 25°C case temperature, decreasing to 300 A at 80°C. The module includes an integrated NTC temperature sensor for case monitoring. Key electrical parameters include a gate-emitter threshold voltage of 4.5 V to 6.5 V and a maximum power dissipation of 1700 W at 25°C. Thermal resistance from junction to case is 0.15 K/W for the IGBT and 0.3 K/W for the diode.
Verify the specific ordering suffix against the manufacturer's datasheet to confirm the presence of the NTC sensor and connector type. Ensure compatibility with recommended keyed twin plugs for auxiliary terminals. Confirm mounting torque specifications for M6 screws to maintain proper thermal interface and mechanical stability during operation.
Select this module for phase-leg and chopper topologies requiring high current handling and optimized resonant circuit performance. Consider the thermal derating curves when designing heatsink solutions, as continuous current drops significantly at higher case temperatures. Verify that the drive circuit can supply the required gate voltage and manage the specified switching energy losses effectively.
This component belongs to the IXYS MID series of IGBT modules, designed for industrial power conversion applications. It integrates both the switching device and the anti-parallel diode in a single package. The module utilizes an isolated ceramic base plate for electrical insulation and efficient heat transfer to the heatsink.
Check pinout compatibility and thermal resistance values before substituting. Verify that alternative components support the same voltage class and current ratings. Ensure the replacement module accommodates the same mounting hardware and auxiliary terminal configurations.