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The MIF100R12C1TF-BP is a silicon IGBT module manufactured by Micro Commercial Components (MCC). It features a 1200V collector-emitter voltage rating and a continuous collector current of 100A at a case temperature of 100°C. The device utilizes trench technology to achieve low saturation voltage with a positive temperature coefficient. It includes an ultra-fast soft recovery anti-parallel freewheeling diode. Key electrical parameters include a maximum junction temperature of 175°C, an isolation voltage of 2500V, and a short-circuit capability of 10µs.
Verify the authenticity of the component by checking the marking code contents, which include the MCC logo, product number, and trace code. Ensure the ordering suffix matches the required specifications, as specific suffixes may denote compliance attributes such as RoHS status. Purchase only from authorized distributors to guarantee full traceability and avoid counterfeit parts.
Select this module for applications requiring high efficiency and robust thermal performance. The 175°C maximum junction temperature allows for operation in demanding environments. Consider the thermal resistance values when designing the heatsink interface. Verify that the gate drive requirements align with the specified turn-on and turn-off energy characteristics for optimal switching performance.
This component belongs to the MIF100R12C1TF series of IGBT modules from Micro Commercial Components. It is designed for power electronics applications where high voltage and current handling are critical. The module integrates both the IGBT switch and the freewheeling diode in a single package to reduce parasitic inductance and improve system reliability.
Publicly confirmed substitute part numbers are not available in the provided documentation. When considering alternatives, ensure compatibility with voltage ratings, current capabilities, pin configurations, and thermal characteristics. Consult official manufacturer datasheets for cross-reference information.