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Product Detailed Parameters
- Description：IGBT MODULE 1200V 135A 560W Y4M5
- Series：-
- Mfr：IXYS
- Package：Bulk
- IGBT Type：NPT
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 75A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Y4-M5
- Supplier Device Package：Y4-M5
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：135 A
- Power - Max：560 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：5.5 nF @ 25 V
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Overview
The MII100-12A3 is a high-power Insulated Gate Bipolar Transistor (IGBT) module manufactured by IXYS. It features a single IGBT with a built-in anti-parallel diode, designed for robust industrial applications. The device operates with a maximum collector-emitter voltage of 1200 V and supports a continuous collector current of 100 A. Packaged in the MODULE-7 format with five terminals, it utilizes an isolated flange mount configuration for efficient thermal management. The component is rated for a maximum operating temperature of 150 °C and incorporates planar passivation technology to ensure reliability under high-stress conditions.
Feature Summary
- Integrated anti-parallel diode for simplified circuit design
- Isolated flange mount for effective heat dissipation
- Planar passivated chips for enhanced stability
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- High-frequency power converters
Procurement Notes
Verify the specific suffix '3' against the official datasheet to confirm terminal pinout and mechanical dimensions. Ensure the supplier provides traceability documentation matching the IXYS manufacturing standards. Confirm RoHS compliance status through the manufacturer's latest environmental declarations before finalizing procurement orders.
Selection Notes
Select this module when a 1200 V rating and 100 A continuous current are required in a compact form factor. The MODULE-7 package offers a balance between current capacity and board space. Evaluate thermal resistance requirements against the application's cooling solution to ensure junction temperatures remain within the specified 150 °C limit during peak operation.
Part Context
This component belongs to the MII series of IGBT modules from IXYS, which are engineered for medium to high-power switching applications. The series is characterized by its use of planar technology and robust packaging suitable for demanding environments. It serves as a core switching element in power electronics systems requiring high efficiency and durability.
Replacement Considerations
Direct replacements must match the 1200 V / 100 A specification and the MODULE-7 footprint. Verify that alternative parts support the same single IGBT with diode configuration and compatible gate drive characteristics to maintain system performance.
