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Product Detailed Parameters
- Description：IGBT MOD 1200V 330A 1380W Y3DCB
- Series：-
- Mfr：IXYS
- Package：Box
- IGBT Type：NPT
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 200A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Y3-DCB
- Supplier Device Package：Y3-DCB
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：330 A
- Power - Max：1380 W
- Current - Collector Cutoff (Max)：13 mA
- Input Capacitance (Cies) @ Vce：13 nF @ 25 V
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Overview
The MII300-12A4 is an N-channel Insulated Gate Bipolar Transistor module manufactured by IXYS. It utilizes Non-Punch Through (NPT) IGBT technology to deliver a maximum collector current of 330 A and a collector-emitter breakdown voltage of 1200 V. The device features a typical saturation voltage of 2.2 V and is housed in a MODULE-7 flange mount package with seven terminals. Designed for high-power applications, it supports a maximum operating temperature of 150 °C and includes a built-in diode configuration.
Feature Summary
- Utilizes Non-Punch Through (NPT) IGBT technology for robust performance
- Features low saturation voltage characteristics
- Designed for low switching losses
- Includes short circuit SOA capability
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- High-frequency power converters
Procurement Notes
Verify the specific manufacturer source when ordering, as IXYS has been acquired by Littelfuse. Confirm that the component matches the exact MII300-12A4 designation to ensure compatibility with NPT technology specifications. Check datasheet revisions for any updates regarding thermal resistance or pinout configurations before integration into final designs.
Selection Notes
Select this module for applications requiring high current handling up to 330 A with a 1200 V blocking capability. The NPT technology offers advantages in short-circuit ruggedness compared to other IGBT types. Ensure the cooling system can handle the specified power dissipation and that the gate drive voltage remains within the 20 V maximum limit to prevent damage.
Part Context
This component belongs to the IXYS IGBT module family, specifically designed for high-power industrial applications. The MII series typically employs advanced packaging techniques like DCB substrates to enhance thermal management and electrical isolation. These modules are engineered to provide reliable operation in demanding environments where efficiency and thermal stability are critical.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. When evaluating alternatives, ensure the replacement matches the 1200V/330A rating, MODULE-7 footprint, and NPT technology characteristics to maintain system performance and safety margins.
