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Product Detailed Parameters
- Description：IGBT MODULE 3300V 1200A E10
- Series：-
- Mfr：IXYS
- Package：Box
- IGBT Type：NPT
- Configuration：Single Switch
- Vce(on) (Max) @ Vge, Ic：3.1V @ 15V, 1200A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：E10
- Supplier Device Package：E10
- Voltage - Collector Emitter Breakdown (Max)：3300 V
- Current - Collector (Ic) (Max)：1200 A
- Power - Max：-
- Current - Collector Cutoff (Max)：120 mA
- Input Capacitance (Cies) @ Vce：187 nF @ 25 V
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Overview
The MIO1200-33E10 is a single-switch IGBT module manufactured by IXYS, utilizing NPT technology. It features a maximum collector-emitter voltage of 3300 V and a continuous collector current of 1200 A at 80°C case temperature. The typical saturation voltage is 3.1 V at 25°C and 3.8 V at 125°C. The integrated diode supports a forward current of 1200 A with a peak surge current of 11000 A. Key electrical parameters include a gate charge of 12.1 µC, turn-off energy of 1950 mJ, and reverse recovery charge of 1280 µC. The module operates within a junction temperature range of -40°C to +150°C and includes short-circuit capability for 10 µs.
Feature Summary
- NPT IGBT technology providing low-loss operation and smooth switching waveforms for improved EMC performance.
- Industry-standard package design featuring an AISiC base-plate for high power cycling capacity and an AlN substrate for low thermal resistance.
- Integrated short-circuit safe operating area (SOA) capability supporting square RBSOA conditions.
Applications
- AC power converters for industrial drives
- Windmill systems
- Traction applications
- Laser pulse generators
Procurement Notes
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm the datasheet revision date matches the production batch. Check for phase-out status as indicated in documentation. Ensure proper handling procedures are followed due to the high-power nature of the device. Validate mounting torque specifications before installation.
Selection Notes
Select this module for high-voltage applications requiring robust short-circuit tolerance. Consider the thermal impedance characteristics when designing heatsinking solutions. Evaluate the gate resistor requirements to optimize switching times against losses. Verify that the system voltage does not exceed the 3300 V rating under transient conditions.
Part Context
This component belongs to the MIO series of high-power IGBT modules from IXYS. It is designed for demanding power conversion environments. The series utilizes advanced packaging techniques to handle significant current densities. It represents a specific configuration within the broader portfolio of discrete and module semiconductors offered by the manufacturer.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult the manufacturer for direct replacements or updated equivalents if this phase-out model is no longer sourced.
FAQ
What is the maximum short-circuit time for the MIO1200-33E10?
The module supports a short-circuit time of 10 µs under specified conditions including VCC = 2500 V and TVJ < 125°C.
What is the isolation voltage rating of the module?
The module has an isolation voltage (VISOL) rating of 6000 V~ at 50 Hz.
How does the saturation voltage vary with temperature?
The typical collector-emitter saturation voltage increases from 3.1 V at 25°C to 3.8 V at 125°C junction temperature.
