MIO1500-25E10

Overview

The MIO1500-25E10 is a single-switch IGBT module from IXYS, utilizing NPT technology. It features a collector-emitter breakdown voltage (VCES) of 2500 V and a continuous collector current (IC80) of 1500 A at 80°C case temperature. The typical saturation voltage (VCE(sat)) is 2.7 V at 25°C and 3.3 V at 125°C junction temperature. The integrated diode supports an average forward current of 1500 A with a peak surge current of 13000 A. Key electrical parameters include a gate-emitter threshold voltage of 6 to 7.5 V, turn-on energy of 1400 mJ, and turn-off energy of 1450 mJ under specified inductive load conditions.

Feature Summary

• NPT IGBT technology providing low-loss operation and smooth switching waveforms for improved EMC performance.
• Industry-standard package design incorporating an AISiC base-plate for high power cycling capacity and an AlN substrate for low thermal resistance.
• Short-circuit operating area capability defined at 10 µs duration under specific voltage and temperature constraints.

Applications

• AC power converters for industrial drives
• Windmill systems
• Traction applications
• Laser pulse generators

Procurement Notes

Verify component authenticity through official IXYS channels or authorized distributors. Confirm the phase-out status indicated in documentation when planning long-term production. Ensure proper mounting torque specifications are met during installation to maintain thermal interface integrity and electrical safety isolation requirements.

Selection Notes

Select this module for high-voltage applications requiring 2500 V blocking capability and substantial current handling up to 1500 A. Evaluate thermal management needs based on the specified junction-to-case thermal resistance values. Consider the short-circuit withstand time and energy dissipation characteristics when designing protection circuits for inductive loads.

Part Context

This component belongs to the MIO series of IGBT modules manufactured by IXYS. The E10 suffix denotes the specific physical package outline and terminal configuration used for board mounting. The device integrates a single IGBT switch with a complementary anti-parallel diode within one sealed module structure.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing cooling solutions and drive circuitry if considering alternative high-voltage IGBT modules from other manufacturers.