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The MIP10N65AT0Y-BP is a Trench and Field Stop Insulated Gate Bipolar Transistor manufactured by Micro Commercial Components. It features a 650V collector-emitter breakdown voltage and a continuous DC collector current of 10A at 25°C. The device utilizes an advanced trench gate field-stop structure to achieve high-speed switching with low conduction losses, exhibiting a typical VCE(sat) of 1.40V at 10A and 25°C. It includes an integrated anti-parallel diode with soft recovery characteristics. The component is housed in a TO-220AB package, supports a maximum junction temperature of 175°C, and offers a short-circuit withstand time of up to 6μs.
Verify the specific ordering suffix "-BP" indicates bulk packaging containing 50 pieces per tube, 1K per box, or 5K per carton as defined in the manufacturer's documentation. Confirm that the "P" suffix designates RoHS compliance and lead-free finish. Ensure procurement channels are authorized distributors to guarantee genuine parts with full traceability and warranty coverage.
Select this component for designs requiring a 650V IGBT with a 10A continuous current rating in a TO-220AB through-hole package. Consider the thermal resistance values (RthJ-C of 2.0°C/W for the IGBT) when designing heat sinks. Evaluate the switching energy losses (Eon/Eoff) against the specific gate resistance and supply voltage conditions of the target circuit to ensure efficiency requirements are met.
This part belongs to the MCC M-series IGBT lineup, which employs trench gate field-stop technology. This series is engineered to balance inverter system performance and efficiency, specifically targeting applications where low-loss operation and short-circuit ruggedness are critical design parameters.
Direct substitutes must match the 650V/10A rating, TO-220AB package, and Trench Field Stop architecture. Verify pinout compatibility and thermal resistance specifications before substitution.