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The MIP35R12E1ATN-BP is a silicon IGBT module manufactured by Micro Commercial Components (MCC). It features a 1200V collector-emitter voltage rating and a continuous collector current of 35A. The device integrates an anti-parallel fast and soft recovery freewheeling diode. Key electrical parameters include a maximum junction temperature of 175°C, a short-circuit capability of 180A for 10μs, and a total power dissipation of 227W at 25°C case temperature. The module includes an NTC thermistor with a rated resistance of 5kΩ.
Verify the authenticity of the MIP35R12E1ATN-BP component through authorized MCC distributors to avoid counterfeit parts. Ensure the packaging matches the specified bulk quantity of 8 pieces per box. Confirm that the ordering suffix BP corresponds to the correct packing configuration as defined in the official datasheet.
Select this module for applications requiring high thermal stability and robust short-circuit protection. The integrated NTC thermistor facilitates precise junction temperature monitoring. Verify that the gate drive requirements align with the specified threshold voltage and charge parameters for optimal switching performance.
This component belongs to the MIP35R12E1ATN series of IGBT modules from Micro Commercial Components. It is designed for medium-power switching applications. The specific part number indicates the inclusion of the BP packing suffix, which denotes the bulk packaging format containing 8 units per box.
Consult the official MCC datasheet for verified substitute part numbers within the same product family. Do not assume functional equivalence with generic IGBT modules without verifying pinout compatibility and electrical ratings.