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The MIP50R12E1ATN-BP is a silicon IGBT module from Micro Commercial Components featuring an integrated NTC thermistor. It provides a collector-emitter voltage of 1200V and continuous collector current ratings of 50A for inverter configurations and 35A for brake-chopper applications. The device supports a maximum junction temperature of 175°C and includes a fast soft-recovery anti-parallel freewheeling diode. Electrical characteristics include a typical Vce(sat) of 1.9V at 50A and 25°C, with total power dissipation rated at 288W.
Verify the component against the official MCC datasheet Rev.4-1-12012023 to confirm technical specifications. Ensure the suffix -BP indicates RoHS compliance as documented. Purchase only from authorized distributors to guarantee authenticity and traceability, avoiding unauthorized sources that may supply counterfeit parts lacking proper warranty coverage.
Select this module for high-power applications requiring robust short-circuit tolerance and efficient thermal management. The integrated NTC thermistor facilitates precise junction temperature monitoring. Consider the specific current ratings for inverter versus brake-chopper topologies when designing the circuit. Verify gate drive requirements align with the specified threshold voltages and capacitance values.
This component belongs to the MIP50R12E1ATN series of IGBT modules manufactured by Micro Commercial Components. It utilizes silicon technology and is designed for industrial power electronics. The module integrates an IGBT switch with an anti-parallel diode and an NTC thermistor within a single package structure.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult the manufacturer's official resources or authorized distributors for equivalent alternatives if this specific model is unavailable.
The maximum operating junction temperature (Tjmax) is 175°C.
Yes, the module includes an integrated NTC thermistor with a rated resistance of 5 kΩ at 25°C.
The module has a high short circuit capability of 10 microseconds under specified conditions.