MIW40N120-BP

Overview

The MIW40N120-BP is a Trench and Field Stop Insulated Gate Bipolar Transistor manufactured by Micro Commercial Components. It features a TO-247 package with a maximum collector-emitter voltage of 1200V and a continuous collector current of 40A at 25°C. The device exhibits a low saturation voltage ranging from 1.9V to 2.4V at VGE=15V and IC=40A, with a positive temperature coefficient for thermal stability. Key electrical parameters include a gate-emitter threshold voltage of 5.5V to 6.5V, a power dissipation capacity of 277W, and a junction-to-case thermal resistance of 0.45°C/W. Switching characteristics show turn-on energy of 3.3mJ and turn-off energy of 1.4mJ under standard test conditions.

Feature Summary

• Trench and Field Stop technology providing low saturation voltage and fast switching performance
• Positive temperature coefficient for the collector-emitter saturation voltage ensuring safe parallel operation
• High ruggedness with defined short circuit withstand time capabilities
• Halogen-free construction with epoxy meeting UL 94 V-0 flammability rating

Applications

• High-frequency switch-mode power supplies
• Motor control drives and inverters
• Uninterruptible power supply (UPS) systems
• Induction heating applications

Procurement Notes

Verify the specific ordering suffix when sourcing components. The BP suffix indicates RoHS compliance. Confirm the packaging format matches project requirements, as the standard tube contains 30 pieces per tube. Ensure procurement channels are authorized distributors to guarantee part authenticity and traceability. Check for any additional halogen-free designations if required by specific environmental regulations.

Selection Notes

Select this component for high-voltage applications requiring robust thermal stability. The positive temperature coefficient of VCE(sat) facilitates reliable parallel operation without active current balancing. Evaluate the switching energy losses against the thermal resistance limits for the intended heat sink design. Consider the 1200V breakdown voltage margin relative to the system's peak operating voltage to ensure long-term reliability under transient conditions.

Part Context

This IGBT belongs to the MIW40N120 series utilizing trench and field stop architecture. It is designed for medium to high-power conversion applications. The TO-247 package provides efficient thermal management through direct mounting to heatsinks. The device integrates an anti-parallel diode with specified reverse recovery characteristics suitable for hard-switching topologies.

Replacement Considerations

Direct pin-compatible replacements must match the 1200V/40A rating and TO-247 footprint. Verify that substitute devices offer comparable VCE(sat) values and switching energies to maintain system efficiency. Ensure the alternative component supports the same gate drive voltage levels and thermal resistance specifications.