MIW40N120F-BP

$5.09

Description：IGBT TRENCH FS 1200V 80A TO-247
Series：-

SKU:67fbfcab36ee Category: Single IGBTs Brand: MCC (Micro Commercial Components)

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 1200V 80A TO-247
Series：-
Mfr：MCC (Micro Commercial Components)
Package：Bulk
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：160 A
Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 40A
Power - Max：277 W
Switching Energy：5.02mJ (on), 2.72mJ (off)
Input Type：Standard
Gate Charge：240 nC
Td (on/off) @ 25°C：160ns/237ns
Test Condition：600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)：367 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

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MIW40N120F-BP

Overview

The MIW40N120F-BP is a Trench and Field Stop Insulated Gate Bipolar Transistor (IGBT) manufactured by Micro Commercial Components. It features an integrated anti-parallel diode within a TO-247 package. Key electrical parameters include a collector-emitter breakdown voltage of 1200 V, a continuous collector current of 40 A at 25°C, and a maximum power dissipation of 277 W. The device exhibits a typical saturation voltage of 1.85 V at 40 A and supports a short-circuit withstand time of 10 μs. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

Utilizes Trench and Field Stop technology for low saturation voltage and fast switching performance.
Features a positive temperature coefficient for the collector-emitter saturation voltage to ensure safe paralleling operation.
Includes a very fast-recovery anti-parallel diode with tight parameter distribution.
Constructed as a halogen-free 'Green' device with epoxy meeting UL 94 V-0 flammability ratings.

Applications

High-frequency inverter systems requiring optimal balance between efficiency and performance.
Industrial motor drives and servo amplifiers.
Switch-mode power supplies and high-efficiency converters.

Procurement Notes

Verify authenticity through authorized channels due to industry counterfeiting risks. Confirm RoHS compliance via the BP suffix designation. Ensure storage conditions align with the specified temperature range to maintain component integrity prior to assembly.

Selection Notes

Select this component for applications demanding high ruggedness and thermal stability. The 10 μs short-circuit capability provides protection against fault conditions. Verify gate drive requirements match the specified threshold and charge characteristics for optimal switching performance.

Part Context

This IGBT belongs to the MIW40N120F series, designed for medium to high-power applications. The TO-247-3 package facilitates efficient heat dissipation through direct mounting to a heatsink. The integration of the anti-parallel diode simplifies circuit topology compared to discrete solutions.

Replacement Considerations

Direct substitutes require matching 1200V rating, 40A current capacity, and TO-247 packaging. Verify pinout compatibility and thermal resistance specifications. Cross-reference switching energy values to ensure equivalent system performance.