MIW50N65AH2Y-BP

$1.44

Description：IGBT TRENCH FS 650V 80A TO-247AB
Series：-

SKU:b18578d1b8ef Category: Single IGBTs Brand: MCC (Micro Commercial Components)

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 80A TO-247AB
Series：-
Mfr：MCC (Micro Commercial Components)
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：200 A
Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 50A
Power - Max：283 W
Switching Energy：2.05mJ (on), 360µJ (off)
Input Type：Standard
Gate Charge：140 nC
Td (on/off) @ 25°C：24ns/74ns
Test Condition：400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr)：148 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AB
Grade：-
Qualification：-

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MIW50N65AH2Y-BP

Overview

The MIW50N65AH2Y-BP is a single IGBT utilizing Trench and Field Stop technology, rated at 650 V collector-emitter voltage. It features a continuous collector current of 50 A and a pulsed collector current of 200 A. The device is housed in a TO-247AB package with a maximum power dissipation of 283 W. Operating junction temperature ranges from -40°C to 175°C.

Feature Summary

Trench and Field Stop technology for superior current conduction
Positive temperature coefficient for Vce(sat)
High ruggedness suitable for hard and soft switching

Applications

Hard switching applications
Soft switching applications
Industrial motor drives
Power supplies

Procurement Notes

Verify the specific suffix BP against the manufacturer's official documentation to confirm pinout compatibility and thermal characteristics. Ensure the TO-247AB package dimensions match the target PCB footprint. Cross-reference the active status and lead-free compliance with the latest datasheet revision before finalizing procurement orders.

Selection Notes

Select this component when a 650V rating and 50A continuous current are required in a through-hole package. The Trench Field Stop architecture offers improved switching performance compared to standard planar devices. Consider the 283W power dissipation limit and thermal resistance requirements for the intended heat sink design.

Part Context

This part belongs to MCC's discrete semiconductor portfolio, specifically within the IGBT category. It complements other 650V and 1200V IGBTs offered by the manufacturer, providing options for various current ratings and packaging styles to support diverse power electronics designs.