MIW50N65AT0Y-BP

MIW50N65AT0Y-BP

$1.68
  • Description:IGBT DISCRETE,TO-247AB
  • Series:-

SKU:f56cbd0e6749 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT DISCRETE,TO-247AB
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):70 A
  • Current - Collector Pulsed (Icm):200 A
  • Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 50A
  • Power - Max:214 W
  • Switching Energy:1.57mJ (on), 580µJ (off)
  • Input Type:Standard
  • Gate Charge:250 nC
  • Td (on/off) @ 25°C:20ns/131ns
  • Test Condition:300V, 50A, 20Ohm, 15V
  • Reverse Recovery Time (trr):148 ns
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AB
  • Grade:-
  • Qualification:-

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MIW50N65AT0Y-BP

Overview

The MIW50N65AT0Y-BP is a single IGBT from Micro Commercial Components, featuring a trench field-stop architecture. It operates at a 650 V collector-emitter voltage and supports a continuous collector current of 70 A. The device is housed in a TO-247AB through-hole package with a maximum power dissipation of 214 W. This component is designed for high-speed switching applications, offering positive temperature coefficient characteristics for safe parallel operation.

Feature Summary

  • Trench field-stop technology for high-speed smooth switching
  • Positive temperature coefficient for collector-emitter saturation voltage
  • High ruggedness and thermal performance

Applications

  • Hard and soft switching circuits
  • Motor control drives
  • Power supply inverters

Procurement Notes

Verify the exact datasheet version from MCC to confirm electrical parameters. Ensure the TO-247AB footprint matches the PCB design. Check for specific ordering suffixes if different packaging options are required. Confirm thermal resistance values for heatsink calculations. Validate that the 70 A rating aligns with the system's peak current requirements.

Selection Notes

Select this IGBT for applications requiring robust switching capabilities and high current handling. The trench field-stop structure provides efficiency benefits over standard designs. Consider the thermal management needs due to the 214 W dissipation rating. Ensure the gate drive circuitry supports the switching speed characteristics. Evaluate the cost-performance ratio against alternative trench technologies.

Part Context

This part belongs to the MIW series of single IGBTs from Micro Commercial Components. The series utilizes trench field-stop technology to enhance switching performance. The TO-247AB package is common for medium-power industrial applications. The product line targets efficient power conversion systems.

Replacement Considerations

Consult official substitution guides for compatible trench field-stop IGBTs with similar voltage and current ratings. Verify pinout compatibility before swapping. Compare thermal characteristics and switching speeds to ensure system stability.

MIW50N65AT0Y-BPMIW50N65AT0Y-BP
$1.68
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