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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 80A TO-247-3
- Series：-
- Mfr：MCC (Micro Commercial Components)
- Package：Bulk
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 50A
- Power - Max：250 W
- Switching Energy：1.59mJ (on), 1.34mJ (off)
- Input Type：Standard
- Gate Charge：186 nC
- Td (on/off) @ 25°C：69ns/404ns
- Test Condition：400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr)：88 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The MIW50N65H is a Trench and Field Stop IGBT manufactured by Micro Commercial Components (MCC). It features a collector-emitter voltage of 650 V and a continuous collector current of 50 A at 25°C. The device exhibits a saturation voltage of 1.9 V at 50 A and 25°C, with a maximum gate-emitter voltage of ±20 V. Total switching energy reaches 3.68 mJ at 175°C. Thermal resistance from junction to case is 0.6°C/W. The component is housed in a TO-247 package and supports an operating junction temperature range from -55°C to +175°C.
Feature Summary
- Trench and Field Stop technology for low saturation voltage and fast switching
- Positive temperature coefficient for Vce(sat) ensuring thermal stability
- High ruggedness with tight parameter distribution
- Epoxy encapsulation meeting UL 94 V-0 flammability rating
Applications
- High-frequency power conversion circuits
- Motor drive systems requiring high thermal stability
- Industrial inverters and PWM topologies
Procurement Notes
Verify the authenticity of the MIW50N65H through authorized MCC distributors or direct procurement channels. Counterfeit components pose significant risks; ensure traceability matches official standards. Confirm that the suffix 'BP' indicates bulk packaging containing 360 pieces per box as specified in the ordering information section of the datasheet.
Selection Notes
Select this component when a 650 V IGBT with 50 A continuous current capability is required. Consider the 0.6°C/W junction-to-case thermal resistance for heatsink design. Ensure the application operates within the -55°C to +175°C junction temperature range. Verify that the gate drive voltage does not exceed the ±20 V maximum rating to prevent device failure.
Part Context
The MIW50N65H belongs to the MIW series of Trench and Field Stop IGBTs produced by Micro Commercial Components. This series utilizes advanced trench gate technology to optimize switching performance and conduction losses. The TO-247 package provides robust mechanical mounting and efficient heat dissipation for medium-power applications.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires matching electrical parameters such as 650 V breakdown, 50 A current rating, and TO-247-3 package compatibility.
