MIW50N65RA-BP

Overview

The MIW50N65RA-BP is a Trench and Field Stop Insulated Gate Bipolar Transistor manufactured by Micro Commercial Components. It features a collector-emitter voltage of 650V and a continuous DC collector current of 50A at 25°C. The device operates within a junction temperature range of -40°C to +175°C and utilizes a TO-247AB package. Key electrical parameters include a maximum gate-emitter voltage of ±30V, a short circuit withstand time of 5μs, and a typical saturation voltage of 1.95V at 25°C with 50A collector current.

Feature Summary

• Utilizes Trench and Field Stop technology for low switching losses and high ruggedness.
• Features a positive temperature coefficient for stable parallel operation.
• Supports a maximum junction temperature of 175°C.
• Halogen-free construction with epoxy meeting UL 94 V-0 flammability rating.

Applications

• High frequency switching applications
• Medical equipment power supplies
• Uninterruptible power supply (UPS) systems
• Motion and servo control drives

Procurement Notes

Verify the specific ordering suffix against official MCC documentation to confirm compliance status. Confirm that the component is sourced from authorized distributors to ensure authenticity and traceability. Review the manufacturer's general terms and conditions regarding liability and warranty coverage before procurement.

Selection Notes

Select this component for designs requiring high thermal stability and robust short-circuit capability up to 5 microseconds. Ensure the application voltage does not exceed the 650V collector-emitter rating. Verify that the thermal management system can handle the specified power dissipation and junction-to-case thermal resistance values under expected operating loads.

Part Context

This part belongs to the MIW50N65RA series of IGBTs from Micro Commercial Components. It is designed as a single N-channel device intended for medium-power switching applications. The product line emphasizes efficiency through trench field stop architecture, targeting industrial and medical markets where reliability and thermal performance are critical.

Replacement Considerations

Direct substitutes must match the 650V/50A rating, TO-247AB package, and Trench Field Stop technology. Verify pinout compatibility and thermal characteristics. Cross-reference datasheets for saturation voltage and switching energy differences to ensure circuit performance remains within acceptable limits.

FAQ

What is the maximum short circuit withstand time for the MIW50N65RA-BP?

The device supports a short circuit withstand time of 5 microseconds when VGE is 15V, VCC is 400V, and VCEM is less than or equal to 650V.

Does the MIW50N65RA-BP meet halogen-free requirements?

Yes, the device is defined as a Halogen-free 'Green' product, containing less than 900ppm bromine, less than 900ppm chlorine, and less than 1000ppm antimony compounds.

What is the thermal resistance from junction to case for this IGBT?

The IGBT thermal resistance from junction to case is 0.42°C/W.